Theoretical model of transition metal-shallow acceptor impurity pairs in silicon (1986)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Language: Português
- Source:
- Título do periódico: Mat Science Forum
- Volume/Número/Paginação/Ano: v.10-2, n.pt.1, p.55-60, 1986
- Conference titles: International Conference on Defects in Semiconductors
-
ABNT
ASSALI, L. V. C. e LEITE, J. R. Theoretical model of transition metal-shallow acceptor impurity pairs in silicon. Mat Science Forum. [S.l.]: Instituto de Física, Universidade de São Paulo. . Acesso em: 28 maio 2024. , 1986 -
APA
Assali, L. V. C., & Leite, J. R. (1986). Theoretical model of transition metal-shallow acceptor impurity pairs in silicon. Mat Science Forum. Instituto de Física, Universidade de São Paulo. -
NLM
Assali LVC, Leite JR. Theoretical model of transition metal-shallow acceptor impurity pairs in silicon. Mat Science Forum. 1986 ;10-2( pt.1): 55-60.[citado 2024 maio 28 ] -
Vancouver
Assali LVC, Leite JR. Theoretical model of transition metal-shallow acceptor impurity pairs in silicon. Mat Science Forum. 1986 ;10-2( pt.1): 55-60.[citado 2024 maio 28 ] - Propriedades eletronicas dos complexos ouro substitucional-metal de transicao intersticial em silicio
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