Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics (1987)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Language: Português
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapore
- Date published: 1987
- Descrição física: 313p
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ABNT
Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics. . Singapore: World Scientific. . Acesso em: 29 maio 2024. , 1987 -
APA
Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics. (1987). Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics. Singapore: World Scientific. -
NLM
Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics. 1987 ;[citado 2024 maio 29 ] -
Vancouver
Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics. 1987 ;[citado 2024 maio 29 ] - Propriedades eletronicas dos complexos ouro substitucional-metal de transicao intersticial em silicio
- Current research on semiconductor physics
- Hydrogen passivation of shallow acceptor levels in crystalline silicon
- Estrutura eletronica do semicondutor diamante tipo p
- Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy
- Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium
- Deep levels induced by 3d transition metal impurities in diamond
- Native surface defects at low-index reconstructed cubic GaN surfaces
- Evidence of Fabry-Pérot oscillations in the emission spectra of deep centers in cubic GaN epitaxial layers
- Investigation of the real semiconductor laser structure by photoreflectance method
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