Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI' (1994)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Abstracts
- Conference titles: International Conference on the Physics of Semiconductors
-
ABNT
SILVA, S W et al. Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'. 1994, Anais.. Vancouver: Instituto de Física de São Carlos, Universidade de São Paulo, 1994. . Acesso em: 28 maio 2024. -
APA
Silva, S. W., Pizani, P. S., Rossi, J. C., Galzerani, J. C., Mlayah, A., Carles, R., et al. (1994). Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'. In Abstracts. Vancouver: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Silva SW, Pizani PS, Rossi JC, Galzerani JC, Mlayah A, Carles R, Lubyshev DI, Basmaji P. Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'. Abstracts. 1994 ;[citado 2024 maio 28 ] -
Vancouver
Silva SW, Pizani PS, Rossi JC, Galzerani JC, Mlayah A, Carles R, Lubyshev DI, Basmaji P. Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'. Abstracts. 1994 ;[citado 2024 maio 28 ] - Raman scattering of the optical '('GA''AS') IND. n'/ '('AL''AS') IND. n' superlattices grown on (311)A and (311)B surface
- Spectroscopy of optical phonons in InAs/GaAs self-assembled quantum dots
- Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures
- Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions
- Propriedades opticas e eletricas de silicio poroso
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas