Surface kinetics effects at the mbe growth of iii-v compounds (1995)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher place: Rio de Janeiro
- Date published: 1995
- Source:
- Título do periódico: Abstracts
- Conference titles: Brazilian Workshop on Semiconductor Physics
-
ABNT
LUBYSHEV, D I et al. Surface kinetics effects at the mbe growth of iii-v compounds. 1995, Anais.. Rio de Janeiro: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 21 maio 2024. -
APA
Lubyshev, D. I., González-Borrero, P. P., Marega Júnior, E., Lubysheva, T. B., La Scala Junior, N., & Basmaji, P. (1995). Surface kinetics effects at the mbe growth of iii-v compounds. In Abstracts. Rio de Janeiro: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Lubyshev DI, González-Borrero PP, Marega Júnior E, Lubysheva TB, La Scala Junior N, Basmaji P. Surface kinetics effects at the mbe growth of iii-v compounds. Abstracts. 1995 ;[citado 2024 maio 21 ] -
Vancouver
Lubyshev DI, González-Borrero PP, Marega Júnior E, Lubysheva TB, La Scala Junior N, Basmaji P. Surface kinetics effects at the mbe growth of iii-v compounds. Abstracts. 1995 ;[citado 2024 maio 21 ] - Localização excitônica em super-redes de (GaAs)-(AlAs) crescidas em diferentes planos cristalinos
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- Photoluminescence study of excitons in the differently oriented self-assembled InAs and In IND.0.5Ga IND.0.5As quantum dots
- Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Molecular-beam epitaxy of self-assembled 'IN''AS' quantum dots on non- (100) oriented 'GA''AS'
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates
- Temperature dependence of the quantization energy in self-assembled 'IN''GA''AS' quantum dots
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