Quantitative analysis of 'AS' and 'SB' pipe diffusion along misfit dislocation in epitaxial 'SI' / 'SI' (ge) (1995)
- Authors:
- USP affiliated authors: BRAGA, NELSON LIEBENTRITT DE ALMEIDA - EP ; ZASNICOFF, LUIZ SERGIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: Instituto de Informatica da Ufrgs
- Publisher place: Porto Alegre
- Date published: 1995
- Source:
- Título do periódico: Proceedings
- Conference titles: Congress of the Brazilian Microelectronics Society
-
ABNT
BRAGA, Nelson Liebentritt de Almeida e ZASNICOFF, Luiz Sergio. Quantitative analysis of 'AS' and 'SB' pipe diffusion along misfit dislocation in epitaxial 'SI' / 'SI' (ge). 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 21 maio 2024. -
APA
Braga, N. L. de A., & Zasnicoff, L. S. (1995). Quantitative analysis of 'AS' and 'SB' pipe diffusion along misfit dislocation in epitaxial 'SI' / 'SI' (ge). In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs. -
NLM
Braga NL de A, Zasnicoff LS. Quantitative analysis of 'AS' and 'SB' pipe diffusion along misfit dislocation in epitaxial 'SI' / 'SI' (ge). Proceedings. 1995 ;[citado 2024 maio 21 ] -
Vancouver
Braga NL de A, Zasnicoff LS. Quantitative analysis of 'AS' and 'SB' pipe diffusion along misfit dislocation in epitaxial 'SI' / 'SI' (ge). Proceedings. 1995 ;[citado 2024 maio 21 ] - Lattice heating and energy balance consideration on the i-v characteristics of submicrometer thin-film fully depleted soi nmos devices
- Quantitative analysis of an enhanced diffusion along interfacial misfit dislocations in 'SI' / 'SI' ('GE') heterostructures
- Lattice heating and energy balance consideration on the I-V characteristics of submicrometer thin-film fully depleted SOI NMOS devices
- Simulated and measured I-V characteristic of FD SOI-NMOS transistors modified by the self-heating effect. (em CD-Rom)
- Estruturas para verificacao de regras de projeto em tecnologia CMOS
- Projeto e construção de retificadores controlados de silício utilizando a técnica de tripla difusão
- Analysis of process parameters in "Smart cut" SOI structure fabrication
- Near-exact two-dimensional mathematical model for pipe diffusion along dislocations
- Reactively-sputtered tin formation using a rf magnetron system
- Estudo teórico-experimental do efeito tiristor parasitário (Latch-up) em estruturas CMOS
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