'AL IND.0.47' 'IN IND.0.53' 'AS' / 'IN'p heterostructure grown by mbe (1995)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC ; GUIMARAES, FRANCISCO EDUARDO GONTIJO - IFSC
- Unidade: IFSC
- Subjects: SUPERFÍCIE FÍSICA; FILMES FINOS; MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Ufrgs
- Publisher place: Porto Alegre
- Date published: 1995
- Source:
- Título do periódico: Scientific Program and Abstracts
- Conference titles: Simposio Latino-Americano de Fisica do Estado Solido
-
ABNT
SISNIEGA, G et al. 'AL IND.0.47' 'IN IND.0.53' 'AS' / 'IN'p heterostructure grown by mbe. 1995, Anais.. Porto Alegre: Ufrgs, 1995. . Acesso em: 10 jun. 2024. -
APA
Sisniega, G., González-Borrero, P. P., Guimarães, F. E. G., Lubyshev, D. I., Petitprez, E., Marega Júnior, E., & Basmaji, P. (1995). 'AL IND.0.47' 'IN IND.0.53' 'AS' / 'IN'p heterostructure grown by mbe. In Scientific Program and Abstracts. Porto Alegre: Ufrgs. -
NLM
Sisniega G, González-Borrero PP, Guimarães FEG, Lubyshev DI, Petitprez E, Marega Júnior E, Basmaji P. 'AL IND.0.47' 'IN IND.0.53' 'AS' / 'IN'p heterostructure grown by mbe. Scientific Program and Abstracts. 1995 ;[citado 2024 jun. 10 ] -
Vancouver
Sisniega G, González-Borrero PP, Guimarães FEG, Lubyshev DI, Petitprez E, Marega Júnior E, Basmaji P. 'AL IND.0.47' 'IN IND.0.53' 'AS' / 'IN'p heterostructure grown by mbe. Scientific Program and Abstracts. 1995 ;[citado 2024 jun. 10 ] - Temperature effects on the optical properties of InGaAs/GaAs single quantum wells grown on high index GaAs substrates with non-abrupt interfaces
- Optical anisotropy in (311) 'IN''GA''AS' / 'GA''AS' quantum wells
- Localização excitônica em super-redes de (GaAs)-(AlAs) crescidas em diferentes planos cristalinos
- Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices
- Estudo e caracterização de pontos quânticos semicondutores através de microscopia eletrônica de transmissão
- Photoluminescence study of excitons in the differently oriented self-assembled InAs and In IND.0.5Ga IND.0.5As quantum dots
- Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Molecular-beam epitaxy of self-assembled 'IN''AS' quantum dots on non- (100) oriented 'GA''AS'
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
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