Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics (1995)
- Authors:
- USP affiliated authors: SANTOS FILHO, SEBASTIAO GOMES DOS - EP ; HASENACK, CLAUS MARTIN - EP
- Unidade: EP
- DOI: 10.1088/0268-1242/10/7/015
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Semiconductor Science and Technology
- Volume/Número/Paginação/Ano: v.10, n.7 , p.990-6, jul. 1995
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
SANTOS FILHO, Sebastião Gomes dos et al. Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics. Semiconductor Science and Technology, v. 10, n. 7 , p. 990-6, 1995Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/10/7/015. Acesso em: 02 maio 2024. -
APA
Santos Filho, S. G. dos, Hasenack, C. M., Lopes, M. C. V., & Baranauskas, V. (1995). Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics. Semiconductor Science and Technology, 10( 7 ), 990-6. doi:10.1088/0268-1242/10/7/015 -
NLM
Santos Filho SG dos, Hasenack CM, Lopes MCV, Baranauskas V. Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics [Internet]. Semiconductor Science and Technology. 1995 ;10( 7 ): 990-6.[citado 2024 maio 02 ] Available from: https://doi.org/10.1088/0268-1242/10/7/015 -
Vancouver
Santos Filho SG dos, Hasenack CM, Lopes MCV, Baranauskas V. Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics [Internet]. Semiconductor Science and Technology. 1995 ;10( 7 ): 990-6.[citado 2024 maio 02 ] Available from: https://doi.org/10.1088/0268-1242/10/7/015 - Silicon surface roughening induced by c 'BR''F IND.3' plasma during the reactive ion etching
- Deposition and renoval of surface contaminants from silicon wafers by means of a diluted hp dip followed or not by a isopropyl alcohol boil
- Plating mechanisms of cooper onto silicon surfaces diluted hydrofluoric solutions
- Influence of different rapid thermal oxidation recipes on the rms roughness of the 'SI'-'SI''O IND.2' interface
- Achievement of high quality thin gates oxides grown by rapid thermal oxidation of silicon
- Mechanisms of metal and sulfur contamination on silicon wafer surfaces during HF-last cleanings. (em CD-Rom)
- A Less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps
- Obtencao de camadas ultrafinas de oxido de silicio por oxidacao termica rapida
- Electroless mechanism of 'CU' plating onto 'SI' during hf-last cleanings
- Estudo da quantificação da rugosidade da interface Si-SiO2. (em CD-Rom)
Informações sobre o DOI: 10.1088/0268-1242/10/7/015 (Fonte: oaDOI API)
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
