Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices (1995)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS); MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Materials Science and Engineering B
- Volume/Número/Paginação/Ano: v.35, p.180-3, 1995
-
ABNT
PUSEP, Yuri A. et al. Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices. Materials Science and Engineering B, v. 35, p. 180-3, 1995Tradução . . Acesso em: 21 maio 2024. -
APA
Pusep, Y. A., Silva, S. W., Galzerani, J. C., Lubyshev, D. I., Basmaji, P., Milekhin, A. G., et al. (1995). Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices. Materials Science and Engineering B, 35, 180-3. -
NLM
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P, Milekhin AG, Preobrazhenskii VV, Semyagin BR, Marahovka II. Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices. Materials Science and Engineering B. 1995 ;35 180-3.[citado 2024 maio 21 ] -
Vancouver
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P, Milekhin AG, Preobrazhenskii VV, Semyagin BR, Marahovka II. Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices. Materials Science and Engineering B. 1995 ;35 180-3.[citado 2024 maio 21 ] - Heteroestruturas 'AL''GA''AS' / 'GA''AS' com mobilidade 390 x'10 POT.3''CENTIMETROS QUADRADOS' / v.S crescidas por mbe
- 'IN''AS' wire crystals grown by molecular beam epitaxy on porous 'SI'
- Centro dx em estruturas 'AL IND.X''GA IND.1-X''AS' altamente dopada com selenio
- Centro dx em 'AL IND.X''GA IND.1-X''AS': 'SE'
- Medidas de fotoreflectancia em 'DELTA'-doping
- Photoreflectance of 2-d electron gas: observation of quantum franz-keldysh effect?
- Selenium-dx center-doped 'AL IND.X''GA IND.1-X''AS' grown by molecular beam epitaxy
- Espectroscopia de tunelamento em sistemas delta-doping
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Magnetic-field-tuned impurity level in a mesoscopic 'AL IND.X''GA IND.1-X''AS' / 'GA''AS' antidot sample
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