Formation of cylindrical n / p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial 'SI' / 'SI' ('Ge') (1994)
- Authors:
- Autor USP: BRAGA, NELSON LIEBENTRITT DE ALMEIDA - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Applied Physics Letters
- Volume/Número/Paginação/Ano: v.64, n.11, p.1410-2, mar. 1994
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ABNT
BRAGA, Nelson Liebentritt de Almeida et al. Formation of cylindrical n / p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial 'SI' / 'SI' ('Ge'). Applied Physics Letters, v. 64, n. 11, p. 1410-2, 1994Tradução . . Acesso em: 27 maio 2024. -
APA
Braga, N. L. de A., Buczkowski, A., Kirk, H. R., & Rozgonyi, G. A. (1994). Formation of cylindrical n / p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial 'SI' / 'SI' ('Ge'). Applied Physics Letters, 64( 11), 1410-2. -
NLM
Braga NL de A, Buczkowski A, Kirk HR, Rozgonyi GA. Formation of cylindrical n / p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial 'SI' / 'SI' ('Ge'). Applied Physics Letters. 1994 ;64( 11): 1410-2.[citado 2024 maio 27 ] -
Vancouver
Braga NL de A, Buczkowski A, Kirk HR, Rozgonyi GA. Formation of cylindrical n / p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial 'SI' / 'SI' ('Ge'). Applied Physics Letters. 1994 ;64( 11): 1410-2.[citado 2024 maio 27 ] - Analysis of process parameters in "Smart cut" SOI structure fabrication
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