Deep trench etching in silicon with fluorine containing plasmas (1996)
- Authors:
- USP affiliated authors: MACIEL, HOMERO SANTIAGO - EP ; VERDONCK, PATRICK BERNARD - EP
- Unidade: EP
- DOI: 10.1016/0169-4332(96)00343-1
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Applied Surface Science
- Volume/Número/Paginação/Ano: v.100-1, p.583-6, 1996
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
MANSANO, Ronaldo Domingues e VERDONCK, Patrick Bernard e MACIEL, H. S. Deep trench etching in silicon with fluorine containing plasmas. Applied Surface Science, v. 100-1, p. 583-6, 1996Tradução . . Disponível em: https://doi.org/10.1016/0169-4332(96)00343-1. Acesso em: 03 maio 2024. -
APA
Mansano, R. D., Verdonck, P. B., & Maciel, H. S. (1996). Deep trench etching in silicon with fluorine containing plasmas. Applied Surface Science, 100-1, 583-6. doi:10.1016/0169-4332(96)00343-1 -
NLM
Mansano RD, Verdonck PB, Maciel HS. Deep trench etching in silicon with fluorine containing plasmas [Internet]. Applied Surface Science. 1996 ;100-1 583-6.[citado 2024 maio 03 ] Available from: https://doi.org/10.1016/0169-4332(96)00343-1 -
Vancouver
Mansano RD, Verdonck PB, Maciel HS. Deep trench etching in silicon with fluorine containing plasmas [Internet]. Applied Surface Science. 1996 ;100-1 583-6.[citado 2024 maio 03 ] Available from: https://doi.org/10.1016/0169-4332(96)00343-1 - Mechanisms of surface roughness induced in silicon by fluorine containing plasmas
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- A comparative study of single and double langmuir probe techniques for RF plasma characterization
- Silicon surface roughness induced by SF6-based reactive ion etching process for micromachining applications
- Performance characterization of an RIE reactor with built-in RF excitation antenna
- Mechanisms of surface roughness induced in silicon by fluorine containing plasmas
Informações sobre o DOI: 10.1016/0169-4332(96)00343-1 (Fonte: oaDOI API)
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