Electronic properties and wave packets evolution in semiconductor heterostructure with tamm-state (1996)
- Authors:
- USP affiliated authors: HIPOLITO, OSCAR - IFSC ; BASMAJI, PIERRE - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Fisica da Materia Condensada
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ABNT
BOSQUETTI, D et al. Electronic properties and wave packets evolution in semiconductor heterostructure with tamm-state. 1996, Anais.. São Paulo: Sbf, 1996. . Acesso em: 01 maio 2024. -
APA
Bosquetti, D., Basmaji, P., Hipólito, O., & Marega Júnior, E. (1996). Electronic properties and wave packets evolution in semiconductor heterostructure with tamm-state. In Resumos. São Paulo: Sbf. -
NLM
Bosquetti D, Basmaji P, Hipólito O, Marega Júnior E. Electronic properties and wave packets evolution in semiconductor heterostructure with tamm-state. Resumos. 1996 ;[citado 2024 maio 01 ] -
Vancouver
Bosquetti D, Basmaji P, Hipólito O, Marega Júnior E. Electronic properties and wave packets evolution in semiconductor heterostructure with tamm-state. Resumos. 1996 ;[citado 2024 maio 01 ] - Electric field induce delocalization in an aperiodic semiconductor heterostructure
- Electronic properties of an aperiodic semiconductor heterostructure
- Resonance properties on periodic and aperiodic semiconductor heterostructure
- Electric field induced delocalization in an aperiodic semiconductor heterostructure
- Dependence of the width of a 'DELTA'-impurity layer on position in an 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' strained quantum well
- Heavily 'SE' spike-doped 'GA''AS' grown by molecular beam epitaxy
- Estudo de técnicas de microscopia para caracterização de heteroestruturas semicondutoras
- Vertically stacked self-assembled InGaAs quantum dot layers grown on (311)A/B and (001) orientations
- Preparação química de superfícies de GaAs nos planos (n11) A e B
- Two dimensional numerical analysis using globally convergent algorithm applied to MOSFET
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