Electronic properties of gated 'DELTA'-doped semiconductors (1997)
- Authors:
- Autor USP: HENRIQUES, ANDRE BOHOMOLETZ - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Semiconductor Science and Technology
- Volume/Número/Paginação/Ano: v.12, p.203-9, 1997
-
ABNT
GONÇALVES, L. C. D. e HENRIQUES, André Bohomoletz. Electronic properties of gated 'DELTA'-doped semiconductors. Semiconductor Science and Technology, v. 12, p. 203-9, 1997Tradução . . Acesso em: 15 maio 2024. -
APA
Gonçalves, L. C. D., & Henriques, A. B. (1997). Electronic properties of gated 'DELTA'-doped semiconductors. Semiconductor Science and Technology, 12, 203-9. -
NLM
Gonçalves LCD, Henriques AB. Electronic properties of gated 'DELTA'-doped semiconductors. Semiconductor Science and Technology. 1997 ;12 203-9.[citado 2024 maio 15 ] -
Vancouver
Gonçalves LCD, Henriques AB. Electronic properties of gated 'DELTA'-doped semiconductors. Semiconductor Science and Technology. 1997 ;12 203-9.[citado 2024 maio 15 ] - Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'
- Magneto-optical studies of screened excitons in 'GA''AS' / 'AL IND.X' 'GA IND.1-X''AS' modulation doped quantum wells
- Analise espectral de processos magneto-oscilatorios
- Quantum and transport mobilities in 'DELTA'-doped semiconductors
- Magnetic quantum effects in degenerate superlattices
- High magnetic field transport and photoluminescence in doped InGaAs/InP superlattices
- Optical investigation of magnetic phases in epitaxial 'EU''SE'
- Pseudomorphic InxGal -xAs/InO.52Al0.48As modulation doped heterostructures grown by LP-MOVPE
- Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy
- InP/InGaAs doped quantum barrier systems
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