Optical properties of vertically stacked InGaAs quantum dots layers grown on (311)A/B and (001) GaAs substrates (1997)
- Authors:
- USP affiliated authors: MAREGA JUNIOR, EUCLYDES - IFSC ; BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: University of Nebraska
- Publisher place: Lincoln
- Date published: 1997
- Conference titles: International Conference on Superlattices, Microructures, and Microdevices
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ABNT
PETITPREZ, E et al. Optical properties of vertically stacked InGaAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. 1997, Anais.. Lincoln: University of Nebraska, 1997. . Acesso em: 21 maio 2024. -
APA
Petitprez, E., González-Borrero, P. P., Lubyshev, D. I., La Scala Júnior, N., Marega Júnior, E., Basmaji, P., et al. (1997). Optical properties of vertically stacked InGaAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. In . Lincoln: University of Nebraska. -
NLM
Petitprez E, González-Borrero PP, Lubyshev DI, La Scala Júnior N, Marega Júnior E, Basmaji P, Mazel A, Fourmeaux R, Dorignoc D. Optical properties of vertically stacked InGaAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. 1997 ;[citado 2024 maio 21 ] -
Vancouver
Petitprez E, González-Borrero PP, Lubyshev DI, La Scala Júnior N, Marega Júnior E, Basmaji P, Mazel A, Fourmeaux R, Dorignoc D. Optical properties of vertically stacked InGaAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. 1997 ;[citado 2024 maio 21 ] - Localização excitônica em super-redes de (GaAs)-(AlAs) crescidas em diferentes planos cristalinos
- Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices
- Estudo e caracterização de pontos quânticos semicondutores através de microscopia eletrônica de transmissão
- Photoluminescence study of excitons in the differently oriented self-assembled InAs and In IND.0.5Ga IND.0.5As quantum dots
- Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Molecular-beam epitaxy of self-assembled 'IN''AS' quantum dots on non- (100) oriented 'GA''AS'
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates
- Temperature dependence of the quantization energy in self-assembled 'IN''GA''AS' quantum dots
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