Electronic structure and gate capacitance voltage characteristics of MBE silicon 'delta'-FETs (1997)
- Authors:
- Autor USP: HIPOLITO, OSCAR - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
- Language: Inglês
- Imprenta:
- Publisher: Materials Research Society
- Publisher place: Pittsburgh
- Date published: 1997
- Source:
- Título do periódico: Materials modification and synthesis by ion beam processing
-
ABNT
MANZOLI, José Eduardo e HIPÓLITO, Oscar. Electronic structure and gate capacitance voltage characteristics of MBE silicon 'delta'-FETs. Materials modification and synthesis by ion beam processing. Tradução . Pittsburgh: Materials Research Society, 1997. . . Acesso em: 30 abr. 2024. -
APA
Manzoli, J. E., & Hipólito, O. (1997). Electronic structure and gate capacitance voltage characteristics of MBE silicon 'delta'-FETs. In Materials modification and synthesis by ion beam processing. Pittsburgh: Materials Research Society. -
NLM
Manzoli JE, Hipólito O. Electronic structure and gate capacitance voltage characteristics of MBE silicon 'delta'-FETs. In: Materials modification and synthesis by ion beam processing. Pittsburgh: Materials Research Society; 1997. [citado 2024 abr. 30 ] -
Vancouver
Manzoli JE, Hipólito O. Electronic structure and gate capacitance voltage characteristics of MBE silicon 'delta'-FETs. In: Materials modification and synthesis by ion beam processing. Pittsburgh: Materials Research Society; 1997. [citado 2024 abr. 30 ] - Density of states of on-axis hydrogenic impurities in a 'GA''AS' / 'GA''AL''AS' quantum-well wire of circular cross section
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