Self-consistent modeling of C-V and electronic properties of strained heterostructure MODFETs (1998)
- Authors:
- USP affiliated authors: ROMERO, MURILO ARAUJO - EESC ; HIPOLITO, OSCAR - IFSC
- Unidades: EESC; IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Book of abstracts
- Conference titles: International Conference on Superlattices, Microructures, and Microdevices
-
ABNT
MANZOLI, José Eduardo e ROMERO, Murilo Araújo e HIPÓLITO, Oscar. Self-consistent modeling of C-V and electronic properties of strained heterostructure MODFETs. 1998, Anais.. Hurghada: Escola de Engenharia de São Carlos, Universidade de São Paulo, 1998. . Acesso em: 19 abr. 2024. -
APA
Manzoli, J. E., Romero, M. A., & Hipólito, O. (1998). Self-consistent modeling of C-V and electronic properties of strained heterostructure MODFETs. In Book of abstracts. Hurghada: Escola de Engenharia de São Carlos, Universidade de São Paulo. -
NLM
Manzoli JE, Romero MA, Hipólito O. Self-consistent modeling of C-V and electronic properties of strained heterostructure MODFETs. Book of abstracts. 1998 ;[citado 2024 abr. 19 ] -
Vancouver
Manzoli JE, Romero MA, Hipólito O. Self-consistent modeling of C-V and electronic properties of strained heterostructure MODFETs. Book of abstracts. 1998 ;[citado 2024 abr. 19 ] - Characteristics and electronic structure of pHEMT/InP (presence of strain and 'delta'-doped channel.)
- Stress-related effects on the C-V characteristics of pseudomorphic MODFETs
- Características e estrutura eletrônica de HEMT pseudomórfica (presença de strain e canal 'delta' dopado)
- On the capacitance-voltage modeling of strained quantum-well MODFET´s
- Density of states of on-axis hydrogenic impurities in a 'GA''AS' / 'GA''AL''AS' quantum-well wire of circular cross section
- Espectro de perda de energia de eletrons de um sistema semicondutor de dupla camada
- Impurity-bound magnetopolaron in 'GA''AS' quantum well structures
- Shallow donor impurity in quantum wire in the presence of a magnetic field
- Ground- and excited-state impurity bands in silicon inversion layers
- Magnetic field effects on impurity states in quantum dots
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