Strain fields relaxation effect in vertically stacked InAs quantum dots layers grown on (311)A/B and (001) GaAs substrates (1998)
- Authors:
- USP affiliated authors: MAREGA JUNIOR, EUCLYDES - IFSC ; BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Book of Abstracts
- Conference titles: International Conference on Supperlattices, Microructures, and Microdevices
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ABNT
PETITPREZ, Emmanuel et al. Strain fields relaxation effect in vertically stacked InAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. 1998, Anais.. Hurghada: Instituto de Física de São Carlos, Universidade de São Paulo, 1998. . Acesso em: 19 abr. 2024. -
APA
Petitprez, E., Moshegov, N., Marega Júnior, E., Basmaji, P., Mazel, A., Fourmeaux, R., & Dorignac, D. (1998). Strain fields relaxation effect in vertically stacked InAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. In Book of Abstracts. Hurghada: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Petitprez E, Moshegov N, Marega Júnior E, Basmaji P, Mazel A, Fourmeaux R, Dorignac D. Strain fields relaxation effect in vertically stacked InAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. Book of Abstracts. 1998 ;[citado 2024 abr. 19 ] -
Vancouver
Petitprez E, Moshegov N, Marega Júnior E, Basmaji P, Mazel A, Fourmeaux R, Dorignac D. Strain fields relaxation effect in vertically stacked InAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. Book of Abstracts. 1998 ;[citado 2024 abr. 19 ] - Surface kinetics effects at the mbe growth of iii-v compounds
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