Evidence of phase separation in cubic 'In IND.X''Ga IND.1-X' N epitaxial layers by resonant Raman scattering (1999)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Applied Physics Letters
- ISSN: 0003-6951
- Volume/Número/Paginação/Ano: v. 75, n. 23, p. 3602-3604, 1999
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ABNT
SILVEIRA, E. et al. Evidence of phase separation in cubic 'In IND.X''Ga IND.1-X' N epitaxial layers by resonant Raman scattering. Applied Physics Letters, v. 75, n. 23, p. 3602-3604, 1999Tradução . . Acesso em: 11 maio 2024. -
APA
Silveira, E., Tabata, A., Leite, J. R., Trentin, R., Lemos, V., Frey, T., et al. (1999). Evidence of phase separation in cubic 'In IND.X''Ga IND.1-X' N epitaxial layers by resonant Raman scattering. Applied Physics Letters, 75( 23), 3602-3604. -
NLM
Silveira E, Tabata A, Leite JR, Trentin R, Lemos V, Frey T, As DJ, Schikora D, Lischka K. Evidence of phase separation in cubic 'In IND.X''Ga IND.1-X' N epitaxial layers by resonant Raman scattering. Applied Physics Letters. 1999 ; 75( 23): 3602-3604.[citado 2024 maio 11 ] -
Vancouver
Silveira E, Tabata A, Leite JR, Trentin R, Lemos V, Frey T, As DJ, Schikora D, Lischka K. Evidence of phase separation in cubic 'In IND.X''Ga IND.1-X' N epitaxial layers by resonant Raman scattering. Applied Physics Letters. 1999 ; 75( 23): 3602-3604.[citado 2024 maio 11 ] - Propriedades eletronicas dos complexos ouro substitucional-metal de transicao intersticial em silicio
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