Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS' (2000)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Non-Crystalline Solids
- ISSN: 0022-3093
- Volume/Número/Paginação/Ano: v. 266-269, p. 1260-1264, 2000
- Conference titles: International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology
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ABNT
MULATO, M. et al. Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'. Journal of Non-Crystalline Solids. Amsterdam: Instituto de Física de São Carlos, Universidade de São Paulo. Disponível em: http://probe.usp.br/cgi-bin/sciserv.pl?collection=journals&journal=00223093&issue=v266-269inone&article=1260_mswhefmda2&form=pdf&file=file.pdf. Acesso em: 21 maio 2024. , 2000 -
APA
Mulato, M., Chen, Y., Wagner, S., & Zanatta, A. R. (2000). Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'. Journal of Non-Crystalline Solids. Amsterdam: Instituto de Física de São Carlos, Universidade de São Paulo. Recuperado de http://probe.usp.br/cgi-bin/sciserv.pl?collection=journals&journal=00223093&issue=v266-269inone&article=1260_mswhefmda2&form=pdf&file=file.pdf -
NLM
Mulato M, Chen Y, Wagner S, Zanatta AR. Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS' [Internet]. Journal of Non-Crystalline Solids. 2000 ; 266-269 1260-1264.[citado 2024 maio 21 ] Available from: http://probe.usp.br/cgi-bin/sciserv.pl?collection=journals&journal=00223093&issue=v266-269inone&article=1260_mswhefmda2&form=pdf&file=file.pdf -
Vancouver
Mulato M, Chen Y, Wagner S, Zanatta AR. Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS' [Internet]. Journal of Non-Crystalline Solids. 2000 ; 266-269 1260-1264.[citado 2024 maio 21 ] Available from: http://probe.usp.br/cgi-bin/sciserv.pl?collection=journals&journal=00223093&issue=v266-269inone&article=1260_mswhefmda2&form=pdf&file=file.pdf - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
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- Optoelectronic properties of Er-doped amorphous GaAsN films
- AIN aloys prepared by reactive radio frequency sputtering
- Pulsed laser crystallization of SiGe alloys on GaAs
- Photoluminescence of Sm and Er doped amorphous AIN
- Photoelectron spectroscopic study of amoprhous GaAsN films
- Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films
- Photon and electron excitation of rare-earth-doped amorphous SiN films
- Photoelectron spectroscopic investigation of Mn-containing amorphous silicon and germanium films
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