Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers (2000)
- Authors:
- USP affiliated authors: SILVA, EUZI CONCEICAO FERNANDES DA - IF ; QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Physical Review B
- ISSN: 0163-1829
- Volume/Número/Paginação/Ano: v. 61, n. 20, p. 13923-13928, 2000
-
ABNT
FRIZZARINI, M et al. Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers. Physical Review B, v. 61, n. 20, p. 13923-13928, 2000Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000061000020013923000001&idtype=cvips. Acesso em: 21 maio 2024. -
APA
Frizzarini, M., Silva, E. C. F. da, Quivy, A. A., cavalheiro, A., Leite, J. R., & Meneses, E. A. (2000). Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers. Physical Review B, 61( 20), 13923-13928. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000061000020013923000001&idtype=cvips -
NLM
Frizzarini M, Silva ECF da, Quivy AA, cavalheiro A, Leite JR, Meneses EA. Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers [Internet]. Physical Review B. 2000 ; 61( 20): 13923-13928.[citado 2024 maio 21 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000061000020013923000001&idtype=cvips -
Vancouver
Frizzarini M, Silva ECF da, Quivy AA, cavalheiro A, Leite JR, Meneses EA. Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers [Internet]. Physical Review B. 2000 ; 61( 20): 13923-13928.[citado 2024 maio 21 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000061000020013923000001&idtype=cvips - Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Large InAs/GaAs quantum dots optically active in the long-wavelength region
- Large InAs/GaAs quantum dots with an optical response in the long-wavelength region
- Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
- Concentration dependence of Si-doped GaAs layers grown by moleucular beam epitaxy on (311) A substrates
- InAs/GaAs quantum dots optically active at 1.5 'mu'
- 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates
- H-band emission in single heterojunctions
- The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well
- Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm
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 | PhysRevB.61.13923.pdf | Direct link |
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