Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy (2000)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: MATÉRIA CONDENSADA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: The Institute of Pure and Applied Physics-IPAP
- Publisher place: Tokyo
- Date published: 2000
- Source:
- Título do periódico: Proceedings
- Conference titles: International Workshop on Nitride Semiconductors
-
ABNT
FERNANDEZ, J R L et al. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. 2000, Anais.. Tokyo: The Institute of Pure and Applied Physics-IPAP, 2000. . Acesso em: 11 maio 2024. -
APA
Fernandez, J. R. L., Tabata, A., Chitta, V. A., As, D. J., Frey, T., Noriega, O. C., et al. (2000). Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. In Proceedings. Tokyo: The Institute of Pure and Applied Physics-IPAP. -
NLM
Fernandez JRL, Tabata A, Chitta VA, As DJ, Frey T, Noriega OC, Silva MTO, Abramof E, Schikora D, Lischka K, Leite JR. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. Proceedings. 2000 ;[citado 2024 maio 11 ] -
Vancouver
Fernandez JRL, Tabata A, Chitta VA, As DJ, Frey T, Noriega OC, Silva MTO, Abramof E, Schikora D, Lischka K, Leite JR. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. Proceedings. 2000 ;[citado 2024 maio 11 ] - Propriedades eletronicas dos complexos ouro substitucional-metal de transicao intersticial em silicio
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