Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping (2000)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: MATÉRIA CONDENSADA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: The Institute of Pure and Applied Physics-IPAP
- Publisher place: Tokyo
- Date published: 2000
- Source:
- Título do periódico: Proceedings
- Conference titles: International Workshop on Nitride Semiconductors
-
ABNT
RODRIGUES, S C P et al. Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping. 2000, Anais.. Tokyo: The Institute of Pure and Applied Physics-IPAP, 2000. . Acesso em: 02 jun. 2024. -
APA
Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2000). Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping. In Proceedings. Tokyo: The Institute of Pure and Applied Physics-IPAP. -
NLM
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping. Proceedings. 2000 ;[citado 2024 jun. 02 ] -
Vancouver
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping. Proceedings. 2000 ;[citado 2024 jun. 02 ] - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Band structure of holes in p-'DELTA'-doping superlattices
- Energy levels due to n-type'GAMA'-doping in silicon
- Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
- Parameters of the Kane model from effective masses: ambiguities and instabilities
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
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