Ab initio determination of the atomistic structure of 'Si IND.X' 'Ge IND.1-X' alloy (2001)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Subjects: SEMICONDUTORES; ESTRUTURA ELETRÔNICA; ESTRUTURA DOS SÓLIDOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Physical Review B
- ISSN: 0163-1829
- Volume/Número/Paginação/Ano: v. 64, n. 19, p. 3202/1-3202/4, 2001
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ABNT
VENEZUELA, P et al. Ab initio determination of the atomistic structure of 'Si IND.X' 'Ge IND.1-X' alloy. Physical Review B, v. 64, n. 19, p. 3202/1-3202/4, 2001Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000064000019193202000001&idtype=cvips. Acesso em: 09 jun. 2024. -
APA
Venezuela, P., Dalpian, G. M., Silva, A. J. R. da, & Fazzio, A. (2001). Ab initio determination of the atomistic structure of 'Si IND.X' 'Ge IND.1-X' alloy. Physical Review B, 64( 19), 3202/1-3202/4. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000064000019193202000001&idtype=cvips -
NLM
Venezuela P, Dalpian GM, Silva AJR da, Fazzio A. Ab initio determination of the atomistic structure of 'Si IND.X' 'Ge IND.1-X' alloy [Internet]. Physical Review B. 2001 ; 64( 19): 3202/1-3202/4.[citado 2024 jun. 09 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000064000019193202000001&idtype=cvips -
Vancouver
Venezuela P, Dalpian GM, Silva AJR da, Fazzio A. Ab initio determination of the atomistic structure of 'Si IND.X' 'Ge IND.1-X' alloy [Internet]. Physical Review B. 2001 ; 64( 19): 3202/1-3202/4.[citado 2024 jun. 09 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000064000019193202000001&idtype=cvips - Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
- Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
- Eletronic and structural properties of 'C IND. 59'Si on a hydrogenated Si(100) surface
- A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor
- Adsoption of gold on carbon nanotubes
- Computer simulations of gold nanowires
- Ab initio study of an iron atom interacting with single-wall carbon nanotubes
- Electronic and magnetic properties of iron chains on carbon nanotubes
- Adsorption and incorporation of Mn on Si(100)
- Effect of impurities in the breaking of gold nanowires
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