The optical properties o delta-doped single heterojunctions: growth direction effects (2001)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF
- Unidade: IF
- Subjects: SEMICONDUTORES; ÓPTICA (PROPRIEDADES)
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
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ABNT
DANTAS, N O et al. The optical properties o delta-doped single heterojunctions: growth direction effects. 2001, Anais.. São Paulo: SBF, 2001. . Acesso em: 21 maio 2024. -
APA
Dantas, N. O., Qu, F., Leite, J. R., & Silva, E. C. F. da. (2001). The optical properties o delta-doped single heterojunctions: growth direction effects. In Resumos. São Paulo: SBF. -
NLM
Dantas NO, Qu F, Leite JR, Silva ECF da. The optical properties o delta-doped single heterojunctions: growth direction effects. Resumos. 2001 ;[citado 2024 maio 21 ] -
Vancouver
Dantas NO, Qu F, Leite JR, Silva ECF da. The optical properties o delta-doped single heterojunctions: growth direction effects. Resumos. 2001 ;[citado 2024 maio 21 ] - Cálculo do espectro de fônons dos nitretos BN, AIN, GaN e InN
- Green's function calculations of the formations entropy of a vacancy in silicon
- Investigation of h-band emission in single heterojunctions: doping role of Si atoms
- The optical property of delta-dopped single heterojunctions: growth direction effects
- Lattice response around a silicon vacancy
- Vibrational properties of cubic 'Al IND.X' 'Ga IND.1-X'N and 'In IND.X' 'Ga IND.1-X'N ternary alloys
- The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well
- Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm
- Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells
- Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
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