Full-relativistic calculations of the 'SrTiO IND.3' carrier effective masses and complex dieletric function (2003)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1063/1.1570922
- Subjects: ESTRUTURA ELETRÔNICA; FILMES FINOS; ÓPTICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Applied Physics Letters
- ISSN: 0003-6951
- Volume/Número/Paginação/Ano: v. 82, n. 18, p. 3074-3076, 2003
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
MARQUES, M et al. Full-relativistic calculations of the 'SrTiO IND.3' carrier effective masses and complex dieletric function. Applied Physics Letters, v. 82, n. 18, p. 3074-3076, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1570922. Acesso em: 12 jun. 2024. -
APA
Marques, M., Teles, L. K., Anjos, V., Scolfaro, L. M. R., Leite, J. R., Freire, V. N., et al. (2003). Full-relativistic calculations of the 'SrTiO IND.3' carrier effective masses and complex dieletric function. Applied Physics Letters, 82( 18), 3074-3076. doi:10.1063/1.1570922 -
NLM
Marques M, Teles LK, Anjos V, Scolfaro LMR, Leite JR, Freire VN, Farias GA, Silva Junior EF da. Full-relativistic calculations of the 'SrTiO IND.3' carrier effective masses and complex dieletric function [Internet]. Applied Physics Letters. 2003 ; 82( 18): 3074-3076.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1063/1.1570922 -
Vancouver
Marques M, Teles LK, Anjos V, Scolfaro LMR, Leite JR, Freire VN, Farias GA, Silva Junior EF da. Full-relativistic calculations of the 'SrTiO IND.3' carrier effective masses and complex dieletric function [Internet]. Applied Physics Letters. 2003 ; 82( 18): 3074-3076.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1063/1.1570922 - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Band structure of holes in p-'DELTA'-doping superlattices
- Energy levels due to n-type'GAMA'-doping in silicon
- Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
- Parameters of the Kane model from effective masses: ambiguities and instabilities
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
Informações sobre o DOI: 10.1063/1.1570922 (Fonte: oaDOI API)
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