Confined excitons in 'Si/SrTiO IND.3' quantum wells (2003)
- Authors:
- Pereira, T A S - Universidade Federal do Ceará (UFC)
- Freire, J A K - Universidade Federal do Ceará (UFC)
- Freire, V N - Universidade Federal do Ceará (UFC)
- Farias, G A - Universidade Federal do Ceará (UFC)
- Scolfaro, Luisa Maria Ribeiro
- Leite, J. R.
- Silva Junior, E F da - Universidade Federal de Pernambuco (UFPE)
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: LUMINESCÊNCIA; FILMES FINOS; ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Microelectronics Journal
- ISSN: 0026-2692
- Volume/Número/Paginação/Ano: v. 34, 5-8, p. 507-509, 2003
-
ABNT
PEREIRA, T A S et al. Confined excitons in 'Si/SrTiO IND.3' quantum wells. Microelectronics Journal, v. 34, p. 507-509, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1. Acesso em: 13 jun. 2024. -
APA
Pereira, T. A. S., Freire, J. A. K., Freire, V. N., Farias, G. A., Scolfaro, L. M. R., Leite, J. R., & Silva Junior, E. F. da. (2003). Confined excitons in 'Si/SrTiO IND.3' quantum wells. Microelectronics Journal, 34, 507-509. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1 -
NLM
Pereira TAS, Freire JAK, Freire VN, Farias GA, Scolfaro LMR, Leite JR, Silva Junior EF da. Confined excitons in 'Si/SrTiO IND.3' quantum wells [Internet]. Microelectronics Journal. 2003 ; 34 507-509.[citado 2024 jun. 13 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1 -
Vancouver
Pereira TAS, Freire JAK, Freire VN, Farias GA, Scolfaro LMR, Leite JR, Silva Junior EF da. Confined excitons in 'Si/SrTiO IND.3' quantum wells [Internet]. Microelectronics Journal. 2003 ; 34 507-509.[citado 2024 jun. 13 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1 - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Band structure of holes in p-'DELTA'-doping superlattices
- Energy levels due to n-type'GAMA'-doping in silicon
- Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
- Parameters of the Kane model from effective masses: ambiguities and instabilities
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
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