Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon thermal oxide/silicon structure (2004)
- Authors:
- Autor USP: SANTOS FILHO, SEBASTIAO GOMES DOS - EP
- Unidade: EP
- Subjects: MICROELETRÔNICA; POLÍMEROS (MATERIAIS)
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2004
- ISBN: 1-56677-416-0
- Source:
- Título do periódico: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
TOQUETTI, Leandro Zeidan et al. Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon thermal oxide/silicon structure. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 23 maio 2024. -
APA
Toquetti, L. Z., Santos Filho, S. G. dos, Diniz, J. A., & Swart, J. W. (2004). Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon thermal oxide/silicon structure. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society. -
NLM
Toquetti LZ, Santos Filho SG dos, Diniz JA, Swart JW. Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon thermal oxide/silicon structure. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2024 maio 23 ] -
Vancouver
Toquetti LZ, Santos Filho SG dos, Diniz JA, Swart JW. Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon thermal oxide/silicon structure. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2024 maio 23 ] - Potentiostatic electrodeposition of Au-Sn alloys from a non-cyanide bath for soldering: influence of reagents concentrations
- Influence of the 'SI' / 'SI''O IND.2' interface roughness on electronic roughness
- Construcao de termopares sobre laminas de silicio para calibracao de fornos rtp
- A practical procedure to match the measured capacitance of low and high frequency in order to obtain the energy distribution of the interface stated density
- Aplicação de filmes de siliceto de titanio e do escoamento térmico rapido de camadas de PSG na fabricação de circuitos integrados nMOS
- Formation and stability of Ni(Pt)Si/Poly-Si layered structure
- Characterization of thin MOS gate oxides grown in pyrogenic environment
- Growth and morphology of electroless cobalt thin films deposited onto palladium pre-activated silicon surfaces
- Simulacao numerica dos perfis de temperatura em fornos rtp
- Engenharia de superfícies e de interfaces aplicada na fabricação de circuitos integrados: cinética da oxidação térmica rápida do silício e deposição eletroquímica de metais
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
