The influence of hydrogenation and of the nature of the substrate on the low-temperature Al-induced crystallization of amorphous germanium (2005)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- Subjects: SEMICONDUTORES; CRISTALIZAÇÃO; ALUMÍNIO
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Books of Abstracts
- Conference titles: International Conference on Amorphous and Nanocrystalline Semiconductors
-
ABNT
MUNIZ, L R et al. The influence of hydrogenation and of the nature of the substrate on the low-temperature Al-induced crystallization of amorphous germanium. 2005, Anais.. Lisboa: Instituto de Física de São Carlos, Universidade de São Paulo, 2005. . Acesso em: 02 maio 2024. -
APA
Muniz, L. R., Ribeiro, C. T. M., Zanatta, A. R., & Chambouleyron, I. (2005). The influence of hydrogenation and of the nature of the substrate on the low-temperature Al-induced crystallization of amorphous germanium. In Books of Abstracts. Lisboa: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Muniz LR, Ribeiro CTM, Zanatta AR, Chambouleyron I. The influence of hydrogenation and of the nature of the substrate on the low-temperature Al-induced crystallization of amorphous germanium. Books of Abstracts. 2005 ;[citado 2024 maio 02 ] -
Vancouver
Muniz LR, Ribeiro CTM, Zanatta AR, Chambouleyron I. The influence of hydrogenation and of the nature of the substrate on the low-temperature Al-induced crystallization of amorphous germanium. Books of Abstracts. 2005 ;[citado 2024 maio 02 ] - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
- Espectroscopia óptica de vidros fluoroindatos dopados com íons 'Er POT.3+' e 'Yb POT.3+'
- Optoelectronic properties of Er-doped amorphous GaAsN films
- AIN aloys prepared by reactive radio frequency sputtering
- Pulsed laser crystallization of SiGe alloys on GaAs
- Photoluminescence of Sm and Er doped amorphous AIN
- Photoelectron spectroscopic study of amoprhous GaAsN films
- Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'
- Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films
- Photon and electron excitation of rare-earth-doped amorphous SiN films
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas