Influence of two vacancies in bubdles and isolated carbon naotubes (2006)
- Authors:
- USP affiliated authors: FAZZIO, ADALBERTO - IF ; SILVA, ANTONIO JOSE ROQUE DA - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
AMORIM, Rodrigo G et al. Influence of two vacancies in bubdles and isolated carbon naotubes. 2006, Anais.. São Paulo: Instituto de Física, Universidade de São Paulo, 2006. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxix/sys/resumos/R0030-1.pdf. Acesso em: 12 maio 2024. -
APA
Amorim, R. G., Novaes, F. D., Fazzio, A., Silva, A. J. R. da, & Antonelli, A. (2006). Influence of two vacancies in bubdles and isolated carbon naotubes. In . São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxix/sys/resumos/R0030-1.pdf -
NLM
Amorim RG, Novaes FD, Fazzio A, Silva AJR da, Antonelli A. Influence of two vacancies in bubdles and isolated carbon naotubes [Internet]. 2006 ;[citado 2024 maio 12 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxix/sys/resumos/R0030-1.pdf -
Vancouver
Amorim RG, Novaes FD, Fazzio A, Silva AJR da, Antonelli A. Influence of two vacancies in bubdles and isolated carbon naotubes [Internet]. 2006 ;[citado 2024 maio 12 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxix/sys/resumos/R0030-1.pdf - Electronic and structural properties of "C IND.59" Si on the monohydride Si(100) surface
- First principles study of the ferromagnetism in "Ga IND.1-x" "Mn IND.x" As semiconductors
- Adsorption of "C IND.59" Si on Si(100) monohydride surface
- {\it Ab initio} molecular dynamics study of pure and contaminated gold nanowires
- Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2'
- Effect of impurities on the breaking of Au nanowires
- Adsorption and incorporation of Mn on Si(100)
- Microscopic picture of the single vacancy in germanium
- Adsorption of monomers on semiconductors and the importance of surface degrees of freedom
- Ab initio studies of the 'Si IND.1-X' 'Ge IND.X' alloy and its intrinsic defects
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
