Influence of deposition temperature, solvent, and solute concentration on the deposition mechanisms and final structure of mercury iodide fabricated using the spray pyrolysis technique (2006)
- Authors:
- Autor USP: MULATO, MARCELO - FFCLRP
- Unidade: FFCLRP
- DOI: 10.1063/1.2225992
- Assunto: MELANINAS (PROPRIEDADES ELÉTRICAS)
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 100, p. 043506-1 - 043506-7, 2006
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
UGUCIONI, Julio César e MULATO, Marcelo. Influence of deposition temperature, solvent, and solute concentration on the deposition mechanisms and final structure of mercury iodide fabricated using the spray pyrolysis technique. Journal of Applied Physics, v. 100, p. 043506-1 - 043506-7, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2225992. Acesso em: 21 maio 2024. -
APA
Ugucioni, J. C., & Mulato, M. (2006). Influence of deposition temperature, solvent, and solute concentration on the deposition mechanisms and final structure of mercury iodide fabricated using the spray pyrolysis technique. Journal of Applied Physics, 100, 043506-1 - 043506-7. doi:10.1063/1.2225992 -
NLM
Ugucioni JC, Mulato M. Influence of deposition temperature, solvent, and solute concentration on the deposition mechanisms and final structure of mercury iodide fabricated using the spray pyrolysis technique [Internet]. Journal of Applied Physics. 2006 ; 100 043506-1 - 043506-7.[citado 2024 maio 21 ] Available from: https://doi.org/10.1063/1.2225992 -
Vancouver
Ugucioni JC, Mulato M. Influence of deposition temperature, solvent, and solute concentration on the deposition mechanisms and final structure of mercury iodide fabricated using the spray pyrolysis technique [Internet]. Journal of Applied Physics. 2006 ; 100 043506-1 - 043506-7.[citado 2024 maio 21 ] Available from: https://doi.org/10.1063/1.2225992 - Extended gate field effect transistor using 'V IND.2''O IND.5' xerogel sensing membrane by sol-gel method
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Informações sobre o DOI: 10.1063/1.2225992 (Fonte: oaDOI API)
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