An improved current model in saturation for trapezoidal finfets (2008)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2008
- Source:
- Título do periódico: SBMICRO 2008: Anais
- ISSN: 1938-5862
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
MARTINS, Gustavo e GIACOMINI, Renato Camargo. An improved current model in saturation for trapezoidal finfets. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 28 abr. 2024. -
APA
Martins, G., & Giacomini, R. C. (2008). An improved current model in saturation for trapezoidal finfets. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society. -
NLM
Martins G, Giacomini RC. An improved current model in saturation for trapezoidal finfets. SBMICRO 2008: Anais. 2008 ;[citado 2024 abr. 28 ] -
Vancouver
Martins G, Giacomini RC. An improved current model in saturation for trapezoidal finfets. SBMICRO 2008: Anais. 2008 ;[citado 2024 abr. 28 ] - The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300 o.C
- Comparison between the leakage drain current behavior in SOI nMOSFETs and SOI nMOSFETs operating at 300 o. C
- Obtenção da estrutura de perfil de um transistor MOS a partir de parâmetros PSPICE
- Components of the leakage drain current in accumulation-mode SOI pMOSFETs at high temperatures
- A novel simple method to extract the effective LDD doping concentration on fully depleted SOI NMOSFET
- The graded-channel SOI NMOSFET and its potential to analog applications
- CPU didática. (também em CD-Rom)
- Optimization of the twin gate SOI MOSFET
- Método simples para obtenção de variação da carga efetiva no óxido de um SOI-MOSFET em função da radiação. (em CD-Rom)
- Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation
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