High mobilities by interface roughness in InGaAs/InP heterostructures (2009)
- Authors:
- Autor USP: POUSSEP, IOURI - IFSC
- Unidade: IFSC
- Subjects: SEMICONDUTORES; SPIN; DIFRAÇÃO POR RAIOS X; MAGNETISMO; NANOTECNOLOGIA; FÍSICA DE PARTÍCULAS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Abstracts
- Conference titles: International Conference on the Formation of Semiconductor Interfaces - ICFSI
-
ABNT
PUSEP, Yuri A. et al. High mobilities by interface roughness in InGaAs/InP heterostructures. 2009, Anais.. [S.l.]: Instituto de Física de São Carlos, Universidade de São Paulo, 2009. . Acesso em: 24 abr. 2024. -
APA
Pusep, Y. A., Gozzo, G. C., La Pierre, R. R., & Gold, A. (2009). High mobilities by interface roughness in InGaAs/InP heterostructures. In Abstracts. [S.l.]: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Pusep YA, Gozzo GC, La Pierre RR, Gold A. High mobilities by interface roughness in InGaAs/InP heterostructures. Abstracts. 2009 ;[citado 2024 abr. 24 ] -
Vancouver
Pusep YA, Gozzo GC, La Pierre RR, Gold A. High mobilities by interface roughness in InGaAs/InP heterostructures. Abstracts. 2009 ;[citado 2024 abr. 24 ] - Transition from localized to extended states below the Fermi level in GaAs/AlGaAs multiple quantum well heterostructures
- Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure
- Plasmon- like oscillations of the electrons localized by the DX centers in doped 'Al IND.X''Ga IND.1-X'As
- Quantum interference and localization in disordered GaAs/AlGaAs superlattices
- Coherency of elementary excitations in disordered electron system
- Miniband effects in short-period InGaAs/InP superlattices
- Coherence of elementary excitations in disordered electron systems
- Conduction mechanisms in GaAs nanowire photovoltaics
- Optical probe of quantum hall state in disordered superlattices embedded in a wide parabolic well
- Circularly polarized photoluminescence of GaAs/AlGaAs quantum hall bilayers
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