Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction (2009)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; MORELHAO, SERGIO LUIZ - IF
- Unidade: IF
- Subjects: POÇOS QUÂNTICOS; DIFRAÇÃO POR RAIOS X
- Language: Inglês
- Imprenta:
- Publisher: Wiley-VCH Verlag
- Publisher place: Weinheim
- Date published: 2009
- Source:
- Título do periódico: Physica Status Solidi A - Applications and Materials Science
- ISSN: 1862-6300
- Volume/Número/Paginação/Ano: v. 206, n. 8, p, 1714-1717, 2009
- Conference titles: Biennial Conference on High Resolution X-Ray Diffraction and Imaging
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ABNT
FREITAS, Raul de Oliveira et al. Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction. Physica Status Solidi A - Applications and Materials Science. Weinheim: Wiley-VCH Verlag. Disponível em: http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART. Acesso em: 27 abr. 2024. , 2009 -
APA
Freitas, R. de O., Diaz, B., Abramof, E., Quivy, A. A., & Morelhão, S. L. (2009). Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction. Physica Status Solidi A - Applications and Materials Science. Weinheim: Wiley-VCH Verlag. Recuperado de http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART -
NLM
Freitas R de O, Diaz B, Abramof E, Quivy AA, Morelhão SL. Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction [Internet]. Physica Status Solidi A - Applications and Materials Science. 2009 ; 206( 8):[citado 2024 abr. 27 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART -
Vancouver
Freitas R de O, Diaz B, Abramof E, Quivy AA, Morelhão SL. Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction [Internet]. Physica Status Solidi A - Applications and Materials Science. 2009 ; 206( 8):[citado 2024 abr. 27 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART - Combining synchrotron X-ray techniques for studying nanostructured semiconductor devices
- Strain field of InAs QDs on GaAs (001) substrates by synchrotron X-ray renninger scanning
- Synchrotron X-ray techniques for studying nanostructured semiconductor devices
- Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems
- Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system
- Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning
- Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning
- Two-dimensional intensity profiles of effective satellites
- On the high accuracy lattice parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system
- High-resolution synchrotron radiation Renninger scan to examine hybrid reflections in InGaP/GaAs(001)
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