Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs (2012)
- Authors:
- USP affiliated authors: BARBOSA, MARCEL DUPRET LOPES - IF ; MEDINA, NILBERTO HEDER - IF ; ADDED, NEMITALA - IF ; TABACNIKS, MANFREDO HARRI - IF
- Unidade: IF
- DOI: 10.1016/j.nimb.2011.07.044
- Subjects: RADIAÇÃO IONIZANTE; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Volume/Número/Paginação/Ano: v.273, p.80-82, jul.2012
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
CIRNE, Karin Huscher et al. Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, v. 273, p. 80-82, 2012Tradução . . Disponível em: https://doi.org/10.1016/j.nimb.2011.07.044. Acesso em: 24 maio 2024. -
APA
Cirne, K. H., Silveira, M. A. G., Santos, R. B. B., Gimenez, S. P., Seixas jr, L. E., Melo, W. R. de, et al. (2012). Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 273, 80-82. doi:10.1016/j.nimb.2011.07.044 -
NLM
Cirne KH, Silveira MAG, Santos RBB, Gimenez SP, Seixas jr LE, Melo WR de, Lima JA de, Barbosa MDL, Medina NH, Added N, Tabacniks MH. Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs [Internet]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2012 ;273 80-82.[citado 2024 maio 24 ] Available from: https://doi.org/10.1016/j.nimb.2011.07.044 -
Vancouver
Cirne KH, Silveira MAG, Santos RBB, Gimenez SP, Seixas jr LE, Melo WR de, Lima JA de, Barbosa MDL, Medina NH, Added N, Tabacniks MH. Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs [Internet]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2012 ;273 80-82.[citado 2024 maio 24 ] Available from: https://doi.org/10.1016/j.nimb.2011.07.044 - Performance of electronic devices submitted to X-rays and high energy proton beams
- Development of a system for studies on radiation effects in electronic devices
- Radiation effects for high-energy protons and x-ray in integrated circuits
- Effects of total dose of ionizing radiation on integrated circuits
- Performance of electronic devices submitted to X-rays and high energy proton beams.
- Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries.
- Comparative study of the proton beam effects between the conventional and circular gate MOSFETs.
- Experimental setup for single event effects at the são paulo 8UD pelletron accelerator
- Measurement of a semiconductors passivation layer thickness
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Informações sobre o DOI: 10.1016/j.nimb.2011.07.044 (Fonte: oaDOI API)
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