Development of a system for studies on radiation effects in electronic devices (2012)
- Authors:
- USP affiliated authors: MEDINA, NILBERTO HEDER - IF ; ADDED, NEMITALA - IF ; TABACNIKS, MANFREDO HARRI - IF
- Unidade: IF
- Assunto: FÍSICA NUCLEAR
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumo
- Conference titles: XXXV Reunião de Trabalho sobre Física Nuclear no Brasil
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ABNT
AGUIAR, Vitor A. P. et al. Development of a system for studies on radiation effects in electronic devices. 2012, Anais.. Maresias: SBF, 2012. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/rtfnb/xxxv/programa/posters.pdf. Acesso em: 21 maio 2024. -
APA
Aguiar, V. A. P., Medina, N. H., Added, N., Tabacniks, M. H., Perego, C., Abreu, J. C., & Silveira, M. A. G. (2012). Development of a system for studies on radiation effects in electronic devices. In Resumo. Maresias: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/rtfnb/xxxv/programa/posters.pdf -
NLM
Aguiar VAP, Medina NH, Added N, Tabacniks MH, Perego C, Abreu JC, Silveira MAG. Development of a system for studies on radiation effects in electronic devices [Internet]. Resumo. 2012 ;[citado 2024 maio 21 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/rtfnb/xxxv/programa/posters.pdf -
Vancouver
Aguiar VAP, Medina NH, Added N, Tabacniks MH, Perego C, Abreu JC, Silveira MAG. Development of a system for studies on radiation effects in electronic devices [Internet]. Resumo. 2012 ;[citado 2024 maio 21 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/rtfnb/xxxv/programa/posters.pdf - Radiation effects for high-energy protons and x-ray in integrated circuits
- Effects of total dose of ionizing radiation on integrated circuits
- Performance of electronic devices submitted to X-rays and high energy proton beams.
- Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries.
- Comparative study of the proton beam effects between the conventional and circular gate MOSFETs.
- Experimental setup for single event effects at the são paulo 8UD pelletron accelerator
- Measurement of a semiconductors passivation layer thickness
- A round robin characterisation of the thickness and composition of thin to ultra-thin AlNO films
- Accurate traceable stopping power measurements for protons in 'AL', 'MO', 'CD' and 'SN', in the energy range of ion beam analysis
- Performance of electronic devices submitted to X-rays and high energy proton beams
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