Investigation of porous silicon films structure by optical methods (1992)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFQSC ; BAGNATO, VANDERLEI SALVADOR - IFQSC
- Unidade: IFQSC
- Subjects: MATÉRIA CONDENSADA; CIRCUITOS ELETRÔNICOS; MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
- Language: Inglês
- Imprenta:
- Publisher: Materials Research Society - MRS
- Publisher place: Warrendale
- Date published: 1992
- Source:
- Título do periódico: Proceedings
- Conference titles: Fall Meeting of the Materials Research Society
-
ABNT
BASMAJI, Pierre et al. Investigation of porous silicon films structure by optical methods. 1992, Anais.. Warrendale: Materials Research Society - MRS, 1992. . Acesso em: 04 jun. 2024. -
APA
Basmaji, P., Grivickas, V., Surdutovich, G. I., Vitlina, R., & Bagnato, V. S. (1992). Investigation of porous silicon films structure by optical methods. In Proceedings. Warrendale: Materials Research Society - MRS. -
NLM
Basmaji P, Grivickas V, Surdutovich GI, Vitlina R, Bagnato VS. Investigation of porous silicon films structure by optical methods. Proceedings. 1992 ;[citado 2024 jun. 04 ] -
Vancouver
Basmaji P, Grivickas V, Surdutovich GI, Vitlina R, Bagnato VS. Investigation of porous silicon films structure by optical methods. Proceedings. 1992 ;[citado 2024 jun. 04 ] - Polarized light reflectance measurements of the porous films parameters
- Method of determination of optical anisotropy in presence of a strong scattering
- Photoluminescence and optical anisotropy of a porous silicon
- Method of determination of optical anisotropy in presence of a strong scattering
- Anisotropy investigations and photoluminescence properties of porous silicon
- Photoluminescence and optical anisotropy of a porous silicon
- Determination of porous silicon film parameters by polarized light reflectance measurements
- Heteroestruturas 'AL''GA''AS' / 'GA''AS' com mobilidade 390 x'10 POT.3''CENTIMETROS QUADRADOS' / v.S crescidas por mbe
- 'IN''AS' wire crystals grown by molecular beam epitaxy on porous 'SI'
- Centro dx em estruturas 'AL IND.X''GA IND.1-X''AS' altamente dopada com selenio
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