Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing (2012)
- Authors:
- USP affiliated authors: HENRIQUES, ANDRE BOHOMOLETZ - IF ; QUIVY, ALAIN ANDRE - IF ; MAIA, ÁLVARO DIEGO BERNARDINO - IF
- Unidade: IF
- DOI: 10.1063/1.4770371
- Subjects: EPITAXIA POR FEIXE MOLECULAR; FÍSICA DA MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: APPLIED PHYSICS LETTERS
- Volume/Número/Paginação/Ano: v.101 v.24, p. 243113, 2012
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: green
- Licença: other-oa
-
ABNT
KEIZER, J. G et al. Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing. APPLIED PHYSICS LETTERS, v. 101 24, p. 243113, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4770371. Acesso em: 27 abr. 2024. -
APA
Keizer, J. G., Henriques, A. B., Maia, A. D. B., Quivy, A. A., & Koenraad, P. M. (2012). Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing. APPLIED PHYSICS LETTERS, 101 24, 243113. doi:10.1063/1.4770371 -
NLM
Keizer JG, Henriques AB, Maia ADB, Quivy AA, Koenraad PM. Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing [Internet]. APPLIED PHYSICS LETTERS. 2012 ;101 24 243113.[citado 2024 abr. 27 ] Available from: https://doi.org/10.1063/1.4770371 -
Vancouver
Keizer JG, Henriques AB, Maia ADB, Quivy AA, Koenraad PM. Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing [Internet]. APPLIED PHYSICS LETTERS. 2012 ;101 24 243113.[citado 2024 abr. 27 ] Available from: https://doi.org/10.1063/1.4770371 - Spin coherence generation in negatively charged self-assembled (In,Ga)As quantum dots by pumping excited trion states
- Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots
- Optical measurement of miniband dispersion and bandgap renormalization in modulation-doped AlGaAs/GaAs superlattices
- Luminescence from miniband states in heavily doped superlattices
- Anisotropy of electron and hole g-factors in ('IN','GA')'AS' quantum dots
- Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields
- Light-induced magnetism using picosecond and femtosecond pulses in semiconductor nanostructures
- Tunable phase in the spin coherence generation of self-assembled (In,Ga)As quantum dots
- Luminescence from miniband states in heavily doped superlattices
- Crescimento, fabricação e teste de fotodetectores de radiação infravermelha baseados em pontos quânticos
Informações sobre o DOI: 10.1063/1.4770371 (Fonte: oaDOI API)
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