Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: the case of M2O3 (M = Al,Ga,In) (2015)
- Authors:
- USP affiliated authors: OLIVEIRA, LUIZ NUNES DE - IFSC ; SILVA, JUAREZ LOPES FERREIRA DA - IQSC
- Unidades: IFSC; IQSC
- DOI: 10.1103/PhysRevB.92.205308
- Assunto: FÍSICA TEÓRICA
- Language: Inglês
- Imprenta:
- Publisher place: College Park
- Date published: 2015
- Source:
- Título do periódico: Physical Review B
- ISSN: 1098-0121
- Volume/Número/Paginação/Ano: v. 92, n. 20, p. 205308-1-205308-7 + supplementary material: p. 1-3, Nov. 2015
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
SABINO, Fernando P. et al. Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: the case of M2O3 (M = Al,Ga,In). Physical Review B, v. No 2015, n. 20, p. 205308-1-205308-7 + supplementary material: 1-3, 2015Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.92.205308. Acesso em: 01 maio 2024. -
APA
Sabino, F. P., Besse, R., Oliveira, L. N. de, Wei, S. -H., & Silva, J. L. F. da. (2015). Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: the case of M2O3 (M = Al,Ga,In). Physical Review B, No 2015( 20), 205308-1-205308-7 + supplementary material: 1-3. doi:10.1103/PhysRevB.92.205308 -
NLM
Sabino FP, Besse R, Oliveira LN de, Wei S-H, Silva JLF da. Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: the case of M2O3 (M = Al,Ga,In) [Internet]. Physical Review B. 2015 ; No 2015( 20): 205308-1-205308-7 + supplementary material: 1-3.[citado 2024 maio 01 ] Available from: https://doi.org/10.1103/PhysRevB.92.205308 -
Vancouver
Sabino FP, Besse R, Oliveira LN de, Wei S-H, Silva JLF da. Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: the case of M2O3 (M = Al,Ga,In) [Internet]. Physical Review B. 2015 ; No 2015( 20): 205308-1-205308-7 + supplementary material: 1-3.[citado 2024 maio 01 ] Available from: https://doi.org/10.1103/PhysRevB.92.205308 - Roles of the cation atomic radius and s-d hybridization in the stability of the gallia Ga2O3 structure
- Role of atomic radius and d-states hybridization in the stability of the crystal structure of M2O3 (M = Al, Ga, In) oxides
- Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12
- <the> role of the sp-d hybridization in the crystal structure of transparent conduction oxides: the example of the 'AIND.2''OIND.3' (A=Al, Ga, In) oxides
- Properties of 'Pt IND.n' n=1-6 on graphene
- Why does Ga2O3 crystallize in the gallia structure, while Al2O3 and In2O3 do not?
- Graphene-supported small transition-metal clusters: a density functional theory investigation within van der Waals corrections
- Comparative study of van der Waals corrections to the bulk properties of graphite
- Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: the case of M2O3 (M = Al, Ga, In)
- Optical and fundamental band gaps disparity in transparent conducting oxides: new findings for the In2O3 and SnO2 systems
Informações sobre o DOI: 10.1103/PhysRevB.92.205308 (Fonte: oaDOI API)
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