On the nature of the solvated electron in ice 'I IND. h' (2016)
- Authors:
- USP affiliated authors: FAZZIO, ADALBERTO - IF ; SILVA, ANTONIO JOSE ROQUE DA - IF
- Unidade: IF
- DOI: 10.1039/c5cp06229b
- Subjects: ELÉTRONS; DINÂMICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Physical Chemistry Chemical Physics
- Volume/Número/Paginação/Ano: v. 18, n. 6, p. 4652-4658, fev. 2016
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
KONING, Maurice de et al. On the nature of the solvated electron in ice 'I IND. h'. Physical Chemistry Chemical Physics, v. fe 2016, n. 6, p. 4652-4658, 2016Tradução . . Disponível em: http://pubs.rsc.org/en/content/articlelanding/2016/cp/c5cp06229b#!divAbstract. Acesso em: 12 maio 2024. -
APA
Koning, M. de, Antonelli, A., Fazzio, A., & Silva, A. J. R. da. (2016). On the nature of the solvated electron in ice 'I IND. h'. Physical Chemistry Chemical Physics, fe 2016( 6), 4652-4658. doi:10.1039/c5cp06229b -
NLM
Koning M de, Antonelli A, Fazzio A, Silva AJR da. On the nature of the solvated electron in ice 'I IND. h' [Internet]. Physical Chemistry Chemical Physics. 2016 ; fe 2016( 6): 4652-4658.[citado 2024 maio 12 ] Available from: http://pubs.rsc.org/en/content/articlelanding/2016/cp/c5cp06229b#!divAbstract -
Vancouver
Koning M de, Antonelli A, Fazzio A, Silva AJR da. On the nature of the solvated electron in ice 'I IND. h' [Internet]. Physical Chemistry Chemical Physics. 2016 ; fe 2016( 6): 4652-4658.[citado 2024 maio 12 ] Available from: http://pubs.rsc.org/en/content/articlelanding/2016/cp/c5cp06229b#!divAbstract - Electronic and structural properties of "C IND.59" Si on the monohydride Si(100) surface
- First principles study of the ferromagnetism in "Ga IND.1-x" "Mn IND.x" As semiconductors
- Adsorption of "C IND.59" Si on Si(100) monohydride surface
- Influence of two vacancies in bubdles and isolated carbon naotubes
- {\it Ab initio} molecular dynamics study of pure and contaminated gold nanowires
- Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2'
- Effect of impurities on the breaking of Au nanowires
- Adsorption and incorporation of Mn on Si(100)
- Microscopic picture of the single vacancy in germanium
- Adsorption of monomers on semiconductors and the importance of surface degrees of freedom
Informações sobre o DOI: 10.1039/c5cp06229b (Fonte: oaDOI API)
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