A suitable (wide-range + linear) temperature sensor based on Tm3+ ions (2017)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- DOI: 10.1038/s41598-017-14535-1
- Subjects: TERRAS RARAS; MATERIAIS COMPÓSITOS; FILMES FINOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Scientific Reports
- ISSN: 2045-2322
- Volume/Número/Paginação/Ano: v. 7, p. 14113-1-14113-8, 2017
- Este periódico é de acesso aberto
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: gold
- Licença: cc-by
-
ABNT
ZANATTA, Antonio Ricardo e SCOCA, D. e ALVAREZ, F. A suitable (wide-range + linear) temperature sensor based on Tm3+ ions. Scientific Reports, v. 7, p. 14113-1-14113-8, 2017Tradução . . Disponível em: https://doi.org/10.1038/s41598-017-14535-1. Acesso em: 28 mar. 2024. -
APA
Zanatta, A. R., Scoca, D., & Alvarez, F. (2017). A suitable (wide-range + linear) temperature sensor based on Tm3+ ions. Scientific Reports, 7, 14113-1-14113-8. doi:10.1038/s41598-017-14535-1 -
NLM
Zanatta AR, Scoca D, Alvarez F. A suitable (wide-range + linear) temperature sensor based on Tm3+ ions [Internet]. Scientific Reports. 2017 ; 7 14113-1-14113-8.[citado 2024 mar. 28 ] Available from: https://doi.org/10.1038/s41598-017-14535-1 -
Vancouver
Zanatta AR, Scoca D, Alvarez F. A suitable (wide-range + linear) temperature sensor based on Tm3+ ions [Internet]. Scientific Reports. 2017 ; 7 14113-1-14113-8.[citado 2024 mar. 28 ] Available from: https://doi.org/10.1038/s41598-017-14535-1 - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
- Espectroscopia óptica de vidros fluoroindatos dopados com íons 'Er POT.3+' e 'Yb POT.3+'
- Optoelectronic properties of Er-doped amorphous GaAsN films
- AIN aloys prepared by reactive radio frequency sputtering
- Pulsed laser crystallization of SiGe alloys on GaAs
- Photoluminescence of Sm and Er doped amorphous AIN
- Photoelectron spectroscopic study of amoprhous GaAsN films
- Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'
- Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films
- Photon and electron excitation of rare-earth-doped amorphous SiN films
Informações sobre o DOI: 10.1038/s41598-017-14535-1 (Fonte: oaDOI API)
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