Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures (2016)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; AGOPIAN, PAULA GHEDINI DER - EP ; OLIVEIRA, ALBERTO VINICIUS DE - EP
- Unidade: EP
- DOI: 10.1016/j.sse.2016.05.004
- Subjects: SEMICONDUTORES; MICROELETRÔNICA
- Language: Inglês
- Source:
- Título do periódico: Solid-State Electronics
- Volume/Número/Paginação/Ano: v. 123, p. 124-129, Sep 2016
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: green
- Licença: other-oa
-
ABNT
OLIVEIRA, Alberto Vinicius de et al. Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures. Solid-State Electronics, v. 123, p. 124-129, 2016Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2016.05.004. Acesso em: 10 maio 2024. -
APA
Oliveira, A. V. de, Collaert, N., Thean, A., Claeys, C., Simoen, E., Agopian, P. G. D., & Martino, J. A. (2016). Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures. Solid-State Electronics, 123, 124-129. doi:10.1016/j.sse.2016.05.004 -
NLM
Oliveira AV de, Collaert N, Thean A, Claeys C, Simoen E, Agopian PGD, Martino JA. Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures [Internet]. Solid-State Electronics. 2016 ; 123 124-129.[citado 2024 maio 10 ] Available from: https://doi.org/10.1016/j.sse.2016.05.004 -
Vancouver
Oliveira AV de, Collaert N, Thean A, Claeys C, Simoen E, Agopian PGD, Martino JA. Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures [Internet]. Solid-State Electronics. 2016 ; 123 124-129.[citado 2024 maio 10 ] Available from: https://doi.org/10.1016/j.sse.2016.05.004 - Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes
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- Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source
- Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation
- The impact of the temperature on In0.53Ga0.47As nTFETs
Informações sobre o DOI: 10.1016/j.sse.2016.05.004 (Fonte: oaDOI API)
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