Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning (2020)
- Authors:
- USP affiliated authors: MORELHAO, SERGIO LUIZ - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Subjects: MICROELETRÔNICA; DISPOSITIVOS ELETRÔNICOS; DIFRAÇÃO POR RAIOS X; NANOTECNOLOGIA
- Agências de fomento:
- Language: Inglês
- Imprenta:
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ABNT
MORELHÃO, Sergio Luiz et al. Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning. . Oxford: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/cond-mat/0412254.pdf. Acesso em: 30 abr. 2024. , 2020 -
APA
Morelhão, S. L., Avanci, L. H., Freitas, R., & Quivy, A. A. (2020). Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning. Oxford: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/cond-mat/0412254.pdf -
NLM
Morelhão SL, Avanci LH, Freitas R, Quivy AA. Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning [Internet]. 2020 ;[citado 2024 abr. 30 ] Available from: https://arxiv.org/pdf/cond-mat/0412254.pdf -
Vancouver
Morelhão SL, Avanci LH, Freitas R, Quivy AA. Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning [Internet]. 2020 ;[citado 2024 abr. 30 ] Available from: https://arxiv.org/pdf/cond-mat/0412254.pdf - Combining synchrotron X-ray techniques for studying nanostructured semiconductor devices
- Strain field of InAs QDs on GaAs (001) substrates by synchrotron X-ray renninger scanning
- Synchrotron X-ray techniques for studying nanostructured semiconductor devices
- Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems
- Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction
- Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system
- Two-dimensional intensity profiles of effective satellites
- On the high accuracy lattice parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system
- High-resolution synchrotron radiation Renninger scan to examine hybrid reflections in InGaP/GaAs(001)
- Enhanced X-ray phase determination by three-beam diffraction
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