Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects (2023)
- Authors:
- USP affiliated authors: ADDED, NEMITALA - IF ; MEDINA, NILBERTO HEDER - IF ; ALLEGRO, PAULA RANGEL PESTANA - IF ; MACCHIONE, EDUARDO LUIZ AUGUSTO - IF ; AGUIAR, VITOR ÂNGELO PAULINO DE - IF ; ALBERTON, SAULO GABRIEL PEREIRA NASCIMENTO - IF
- Unidade: IF
- DOI: 10.1016/j.microrel.2023.114916
- Assunto: RADIAÇÃO IONIZANTE
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Microelectronics Reliability
- Volume/Número/Paginação/Ano: v. 142, 114916, 2023
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
ALLEGRO, Paula Rangel Pestana et al. Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects. Microelectronics Reliability, v. 142, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2023.114916. Acesso em: 30 abr. 2024. -
APA
Allegro, P. R. P., Aguiar, V. Â. P. de, Added, N., Medina, N. H., Macchione, E. L. A., & Alberton, S. G. P. N. (2023). Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects. Microelectronics Reliability, 142. doi:10.1016/j.microrel.2023.114916 -
NLM
Allegro PRP, Aguiar VÂP de, Added N, Medina NH, Macchione ELA, Alberton SGPN. Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects [Internet]. Microelectronics Reliability. 2023 ; 142[citado 2024 abr. 30 ] Available from: https://doi.org/10.1016/j.microrel.2023.114916 -
Vancouver
Allegro PRP, Aguiar VÂP de, Added N, Medina NH, Macchione ELA, Alberton SGPN. Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects [Internet]. Microelectronics Reliability. 2023 ; 142[citado 2024 abr. 30 ] Available from: https://doi.org/10.1016/j.microrel.2023.114916 - Neutron-Induced Radiation Effects in UMOS Transistor
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Informações sobre o DOI: 10.1016/j.microrel.2023.114916 (Fonte: oaDOI API)
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