Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction (2023)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; SANTOS, THALES BORRELY DOS - IF ; LIMA, MARCELO DELMONDES DE - IF ; CANTALICE, TIAGO FERNANDES DE - IF
- Unidade: IF
- DOI: 10.1016/j.solmat.2023.112281
- Assunto: EPITAXIA POR FEIXE MOLECULAR
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Solar Energy Materials and Solar Cells
- Volume/Número/Paginação/Ano: v. 254, 112281, 2023
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: hybrid
- Licença: publisher-specific-oa
-
ABNT
SANTOS, Thales Borrely dos et al. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction. Solar Energy Materials and Solar Cells, v. 254, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.solmat.2023.112281. Acesso em: 27 abr. 2024. -
APA
Santos, T. B. dos, Alzeidan, A., Lima, M. D. de, Jacobsen, G. M., Huang, T. Y., Yang, Y. C., et al. (2023). Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction. Solar Energy Materials and Solar Cells, 254. doi:10.1016/j.solmat.2023.112281 -
NLM
Santos TB dos, Alzeidan A, Lima MD de, Jacobsen GM, Huang TY, Yang YC, Cantalice TF de, Goldman RS, Teodoro MD, Quivy AA. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction [Internet]. Solar Energy Materials and Solar Cells. 2023 ; 254[citado 2024 abr. 27 ] Available from: https://doi.org/10.1016/j.solmat.2023.112281 -
Vancouver
Santos TB dos, Alzeidan A, Lima MD de, Jacobsen GM, Huang TY, Yang YC, Cantalice TF de, Goldman RS, Teodoro MD, Quivy AA. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction [Internet]. Solar Energy Materials and Solar Cells. 2023 ; 254[citado 2024 abr. 27 ] Available from: https://doi.org/10.1016/j.solmat.2023.112281 - Evaluation of Surface Recombination Velocity by Means of Computational Simulations and I×V Curves
- The role of surface reconstruction on the performance of INAS/GAAS submonolayer-quantum-dot intermediate-band solar cells
- Evidence of weak strain field in InAs/GaAs submonolayer quantum dots
- ON THE RELATION BETWEEN GROWTH, QUANTUM-DOT MORPHOLOGY, OPTOELECTRONIC PROPERTIES, AND PERFORMANCE IN InAs/GaAs QUANTUM DOT INTERMEDIATE BAND SOLAR CELL
- On the importance of atom probe tomography for the development of new nanoscale devices
- Realistic Simulations and Design of GaAs Solar Cells produced by Molecular Beam Epitaxy
- Growth of a submonolayer quantum dot infrared photodetector in the presence of a c(4x4) surface reconstruction
- Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors
- Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots
- Otimização de células solares de heteroestruturas III-V baseada em dados experimentais
Informações sobre o DOI: 10.1016/j.solmat.2023.112281 (Fonte: oaDOI API)
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