Temperature influence on nanowire tunnel field effect transistors (2012)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; AGOPIAN, PAULA GHEDINI DER - EP
- Unidade: EP
- DOI: 10.1149/04901.0223ecst
- Assunto: MICROELETRÔNICA
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher place: Pennington
- Date published: 2012
- Source:
- Título do periódico: Microelectronics technology and devices, SBMicro
- Conference titles: International Symposium on Microelectronics Technology and Devices
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: bronze
-
ABNT
NEVES, Felipe Souza et al. Temperature influence on nanowire tunnel field effect transistors. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0223ecst. Acesso em: 01 jun. 2024. -
APA
Neves, F. S., Martino, M. D. V., Agopian, P. G. D., Martino, J. A., Rooyackers, R., Leonelli, D., & Claeys, C. (2012). Temperature influence on nanowire tunnel field effect transistors. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0223ecst -
NLM
Neves FS, Martino MDV, Agopian PGD, Martino JA, Rooyackers R, Leonelli D, Claeys C. Temperature influence on nanowire tunnel field effect transistors [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 jun. 01 ] Available from: https://doi.org/10.1149/04901.0223ecst -
Vancouver
Neves FS, Martino MDV, Agopian PGD, Martino JA, Rooyackers R, Leonelli D, Claeys C. Temperature influence on nanowire tunnel field effect transistors [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 jun. 01 ] Available from: https://doi.org/10.1149/04901.0223ecst - Influence of interface trap density on vertical NW-TFETs with different source composition
- Threshold voltage extraction in Tunnel FETs
- Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source
- Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation
- Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs
- Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices
- Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature
- Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs
- The impact of the temperature on In0.53Ga0.47As nTFETs
- Study of line-TFET analog performance comparing with other TFET and MOSFET architectures
Informações sobre o DOI: 10.1149/04901.0223ecst (Fonte: oaDOI API)
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