Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K (2023)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; PERINA, WELDER FERNANDES - EP
- Unidade: EP
- DOI: 10.1109/SBMicro60499.2023.10302604
- Subjects: TRANSISTORES; SEMICONDUTORES
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher: IEEE
- Publisher place: [Piscataway, N.J.]
- Date published: 2023
- Source:
- Título do periódico: SBMicro
- Conference titles: Symposium on Microelectronics Technology and Devices
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
PERINA, Welder Fernandes et al. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302604. Acesso em: 28 abr. 2024. -
APA
Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302604 -
NLM
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K [Internet]. SBMicro. 2023 ;[citado 2024 abr. 28 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302604 -
Vancouver
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K [Internet]. SBMicro. 2023 ;[citado 2024 abr. 28 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302604 - Experimental study of MISHEMT from 450 K down to 200 K for analog applications
- Experimental study of MISHEMT from 450k down to 200 k for analog applications
- MISHEMT intrinsic voltage gain under multiple channel output characteristics
- Design of operational transconductance amplifier with gate-all-around nanosheet MOSFET using experimental data from room temperature to 200°C
- Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C
- The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300 o.C
- Comparison between the leakage drain current behavior in SOI nMOSFETs and SOI nMOSFETs operating at 300 o. C
- Obtenção da estrutura de perfil de um transistor MOS a partir de parâmetros PSPICE
- Components of the leakage drain current in accumulation-mode SOI pMOSFETs at high temperatures
- A novel simple method to extract the effective LDD doping concentration on fully depleted SOI NMOSFET
Informações sobre o DOI: 10.1109/SBMicro60499.2023.10302604 (Fonte: oaDOI API)
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