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Filtros : "Baklanov, M R" Limpar

Filtros

Artigo de periodico
Oscillation of the scattering time in a 2d electron system with oval antidots (1996)
Gusev, G M; Kleber, X; Gennser, U; Maude, D K; Portal, J C; Lubyshev, D I; Basmaji, Pierre; Silva, M P A; Rossi, J C; Nastaushev, Y V; Baklanov, M R
Source: Solid State Electronics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUSEV, G M et al. Oscillation of the scattering time in a 2d electron system with oval antidots. Solid State Electronics, v. 40, n. 1-8, p. 441-6, 1996Tradução . . Disponível em: https://doi.org/10.1016/0038-1101(95)00307-x. Acesso em: 29 maio 2024.
APA
Gusev, G. M., Kleber, X., Gennser, U., Maude, D. K., Portal, J. C., Lubyshev, D. I., et al. (1996). Oscillation of the scattering time in a 2d electron system with oval antidots. Solid State Electronics, 40( 1-8), 441-6. doi:10.1016/0038-1101(95)00307-x
NLM
Gusev GM, Kleber X, Gennser U, Maude DK, Portal JC, Lubyshev DI, Basmaji P, Silva MPA, Rossi JC, Nastaushev YV, Baklanov MR. Oscillation of the scattering time in a 2d electron system with oval antidots [Internet]. Solid State Electronics. 1996 ;40( 1-8): 441-6.[citado 2024 maio 29 ] Available from: https://doi.org/10.1016/0038-1101(95)00307-x
Vancouver
Gusev GM, Kleber X, Gennser U, Maude DK, Portal JC, Lubyshev DI, Basmaji P, Silva MPA, Rossi JC, Nastaushev YV, Baklanov MR. Oscillation of the scattering time in a 2d electron system with oval antidots [Internet]. Solid State Electronics. 1996 ;40( 1-8): 441-6.[citado 2024 maio 29 ] Available from: https://doi.org/10.1016/0038-1101(95)00307-x
Artigo de periodico
Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice (1995)
Basmaji, Pierre; Gusev, G M; Lubyshev, D I; Silva, Marcelo de Assumpção Pereira da ; Rossi, J C; Nastaushev, Y V; Baklanov, M R
Source: Materials Science and Engineering B. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BASMAJI, Pierre et al. Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice. Materials Science and Engineering B, v. 35, p. 322-4, 1995Tradução . . Acesso em: 29 maio 2024.
APA
Basmaji, P., Gusev, G. M., Lubyshev, D. I., Silva, M. de A. P. da, Rossi, J. C., Nastaushev, Y. V., & Baklanov, M. R. (1995). Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice. Materials Science and Engineering B, 35, 322-4.
NLM
Basmaji P, Gusev GM, Lubyshev DI, Silva M de AP da, Rossi JC, Nastaushev YV, Baklanov MR. Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice. Materials Science and Engineering B. 1995 ;35 322-4.[citado 2024 maio 29 ]
Vancouver
Basmaji P, Gusev GM, Lubyshev DI, Silva M de AP da, Rossi JC, Nastaushev YV, Baklanov MR. Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice. Materials Science and Engineering B. 1995 ;35 322-4.[citado 2024 maio 29 ]

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