Source: Jounal of Physics-Condensed Matter. Unidade: IF
Assunto: SEMICONDUTORES
ABNT
CARNEIRO, A S et al. Relaxation of the electrical resistivity in Dr-doped 'Nd IND.0.5´'Ca IND.0.5´'MnO IND.3´ single crystals. Jounal of Physics-Condensed Matter, v. 20, n. 21, p. 215203/1-215203/ , 2008Tradução . . Acesso em: 01 jun. 2024.APA
Carneiro, A. S., Fonseca, F. C., Kimura, T., & Jardim, R. F. (2008). Relaxation of the electrical resistivity in Dr-doped 'Nd IND.0.5´'Ca IND.0.5´'MnO IND.3´ single crystals. Jounal of Physics-Condensed Matter, 20( 21), 215203/1-215203/ .NLM
Carneiro AS, Fonseca FC, Kimura T, Jardim RF. Relaxation of the electrical resistivity in Dr-doped 'Nd IND.0.5´'Ca IND.0.5´'MnO IND.3´ single crystals. Jounal of Physics-Condensed Matter. 2008 ; 20( 21): 215203/1-215203/ .[citado 2024 jun. 01 ]Vancouver
Carneiro AS, Fonseca FC, Kimura T, Jardim RF. Relaxation of the electrical resistivity in Dr-doped 'Nd IND.0.5´'Ca IND.0.5´'MnO IND.3´ single crystals. Jounal of Physics-Condensed Matter. 2008 ; 20( 21): 215203/1-215203/ .[citado 2024 jun. 01 ]