Caroena, G; Machado, Wanda Valle Marcondes; Assali, L. V. C. 
; Justo Filho, João Francisco
Source: Applied Physics Letters. Unidades: EP, IF
Subjects: SEMICONDUTORES, SPINTRÔNICA
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ABNT
CAROENA, G et al. Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices. Applied Physics Letters, v. 102, n. 6, p. 062101, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4791787. Acesso em: 08 jun. 2024.APA
Caroena, G., Machado, W. V. M., Assali, L. V. C., & Justo Filho, J. F. (2013). Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices. Applied Physics Letters, 102( 6), 062101. doi:10.1063/1.4791787NLM
Caroena G, Machado WVM, Assali LVC, Justo Filho JF. Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices [Internet]. Applied Physics Letters. 2013 ; 102( 6): 062101.[citado 2024 jun. 08 ] Available from: https://doi.org/10.1063/1.4791787Vancouver
Caroena G, Machado WVM, Assali LVC, Justo Filho JF. Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices [Internet]. Applied Physics Letters. 2013 ; 102( 6): 062101.[citado 2024 jun. 08 ] Available from: https://doi.org/10.1063/1.4791787
