Source: Resumo. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Assunto: FOTODETECTORES
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ABNT
FERNANDES, F M et al. High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy. 2011, Anais.. Juiz de Fora: UFJF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0026-1.pdf. Acesso em: 12 jun. 2024.APA
Fernandes, F. M., Maia, A. D. B., Ferreira, D. T., Silva, E. C. F. da, & Quivy, A. A. (2011). High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy. In Resumo. Juiz de Fora: UFJF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0026-1.pdfNLM
Fernandes FM, Maia ADB, Ferreira DT, Silva ECF da, Quivy AA. High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy [Internet]. Resumo. 2011 ;[citado 2024 jun. 12 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0026-1.pdfVancouver
Fernandes FM, Maia ADB, Ferreira DT, Silva ECF da, Quivy AA. High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy [Internet]. Resumo. 2011 ;[citado 2024 jun. 12 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0026-1.pdf
