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Artigo de periodico
Thermostabilization of electrical properties of InAs/GaAs self-assembled quantum dots embedded in GaAs/AlAs superlattices (2001)
Chiquito, Adenilson J; Pusep, Yuri A; Mergulhao, Sergio; Galzerani, Jose Carlos; Moshegov,Nikolai; Miller, David L
Source: Japanese Journal of Applied Physics. Part. 1. Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CHIQUITO, Adenilson J et al. Thermostabilization of electrical properties of InAs/GaAs self-assembled quantum dots embedded in GaAs/AlAs superlattices. Japanese Journal of Applied Physics. Part. 1, v. 40, n. 3B, p. 2006-2009, 2001Tradução . . Disponível em: https://doi.org/10.1143/JJAP.40.2006. Acesso em: 23 maio 2024.
APA
Chiquito, A. J., Pusep, Y. A., Mergulhao, S., Galzerani, J. C., Moshegov, N., & Miller, D. L. (2001). Thermostabilization of electrical properties of InAs/GaAs self-assembled quantum dots embedded in GaAs/AlAs superlattices. Japanese Journal of Applied Physics. Part. 1, 40( 3B), 2006-2009. doi:10.1143/JJAP.40.2006
NLM
Chiquito AJ, Pusep YA, Mergulhao S, Galzerani JC, Moshegov N, Miller DL. Thermostabilization of electrical properties of InAs/GaAs self-assembled quantum dots embedded in GaAs/AlAs superlattices [Internet]. Japanese Journal of Applied Physics. Part. 1. 2001 ;40( 3B): 2006-2009.[citado 2024 maio 23 ] Available from: https://doi.org/10.1143/JJAP.40.2006
Vancouver
Chiquito AJ, Pusep YA, Mergulhao S, Galzerani JC, Moshegov N, Miller DL. Thermostabilization of electrical properties of InAs/GaAs self-assembled quantum dots embedded in GaAs/AlAs superlattices [Internet]. Japanese Journal of Applied Physics. Part. 1. 2001 ;40( 3B): 2006-2009.[citado 2024 maio 23 ] Available from: https://doi.org/10.1143/JJAP.40.2006
Trabalho de evento-anais periodico
Plasmon-like oscillations of the electrons localized by the DX centers in doped 'Al IND.x''Ga IND.1-x'As (2001)
Pusep, Yuri A.; Chiquito, A. J.; Fortunato, W.; Galzerani, Jose Carlos
Source: Physica B. Conference titles: International Conference on Defects in Semiconductors. Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A. et al. Plasmon-like oscillations of the electrons localized by the DX centers in doped 'Al IND.x''Ga IND.1-x'As. Physica B. Amsterdam: Elsevier Science. Disponível em: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=09214526&issue=v308-310inone&article=843_pooteltdcida&form=pdf&file=file.pdf. Acesso em: 23 maio 2024. , 2001
APA
Pusep, Y. A., Chiquito, A. J., Fortunato, W., & Galzerani, J. C. (2001). Plasmon-like oscillations of the electrons localized by the DX centers in doped 'Al IND.x''Ga IND.1-x'As. Physica B. Amsterdam: Elsevier Science. Recuperado de http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=09214526&issue=v308-310inone&article=843_pooteltdcida&form=pdf&file=file.pdf
NLM
Pusep YA, Chiquito AJ, Fortunato W, Galzerani JC. Plasmon-like oscillations of the electrons localized by the DX centers in doped 'Al IND.x''Ga IND.1-x'As [Internet]. Physica B. 2001 ;308-310 843-845.[citado 2024 maio 23 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=09214526&issue=v308-310inone&article=843_pooteltdcida&form=pdf&file=file.pdf
Vancouver
Pusep YA, Chiquito AJ, Fortunato W, Galzerani JC. Plasmon-like oscillations of the electrons localized by the DX centers in doped 'Al IND.x''Ga IND.1-x'As [Internet]. Physica B. 2001 ;308-310 843-845.[citado 2024 maio 23 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=09214526&issue=v308-310inone&article=843_pooteltdcida&form=pdf&file=file.pdf
Trabalho de evento-anais periodico
Raman probing of the wave function of collective excitations in the presence of disorder (2001)
Pusep, Yuri A.; Sokolov, S. S.; Fortunato, W.; Galzerani, Jose Carlos; Leite, José Roberto
Source: Physica B. Conference titles: International Conference on Defects in Semiconductors. Unidades: IFSC, IF
Assunto: FÍSICA DA MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A. et al. Raman probing of the wave function of collective excitations in the presence of disorder. Physica B. Amsterdam: Elsevier Science. Disponível em: https://doi.org/10.1016/S0921-4526(01)00835-3. Acesso em: 23 maio 2024. , 2001
APA
Pusep, Y. A., Sokolov, S. S., Fortunato, W., Galzerani, J. C., & Leite, J. R. (2001). Raman probing of the wave function of collective excitations in the presence of disorder. Physica B. Amsterdam: Elsevier Science. doi:10.1016/S0921-4526(01)00835-3
NLM
Pusep YA, Sokolov SS, Fortunato W, Galzerani JC, Leite JR. Raman probing of the wave function of collective excitations in the presence of disorder [Internet]. Physica B. 2001 ;308-310 772-775.[citado 2024 maio 23 ] Available from: https://doi.org/10.1016/S0921-4526(01)00835-3
Vancouver
Pusep YA, Sokolov SS, Fortunato W, Galzerani JC, Leite JR. Raman probing of the wave function of collective excitations in the presence of disorder [Internet]. Physica B. 2001 ;308-310 772-775.[citado 2024 maio 23 ] Available from: https://doi.org/10.1016/S0921-4526(01)00835-3
Artigo de periodico
Raman probing of spatial extents of collective excitations in AlGaAs alloys (2001)
Pusep, Yuri A.; Sokolov, S. S.; Fortunato, W.; Galzerani, Jose Carlos; Leite, J. R.
Source: Journal of Physics:Condensed Matter. Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A. et al. Raman probing of spatial extents of collective excitations in AlGaAs alloys. Journal of Physics:Condensed Matter, v. 13, p. 10165-10174, 2001Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/13/45/305. Acesso em: 23 maio 2024.
APA
Pusep, Y. A., Sokolov, S. S., Fortunato, W., Galzerani, J. C., & Leite, J. R. (2001). Raman probing of spatial extents of collective excitations in AlGaAs alloys. Journal of Physics:Condensed Matter, 13, 10165-10174. doi:10.1088/0953-8984/13/45/305
NLM
Pusep YA, Sokolov SS, Fortunato W, Galzerani JC, Leite JR. Raman probing of spatial extents of collective excitations in AlGaAs alloys [Internet]. Journal of Physics:Condensed Matter. 2001 ; 13 10165-10174.[citado 2024 maio 23 ] Available from: https://doi.org/10.1088/0953-8984/13/45/305
Vancouver
Pusep YA, Sokolov SS, Fortunato W, Galzerani JC, Leite JR. Raman probing of spatial extents of collective excitations in AlGaAs alloys [Internet]. Journal of Physics:Condensed Matter. 2001 ; 13 10165-10174.[citado 2024 maio 23 ] Available from: https://doi.org/10.1088/0953-8984/13/45/305
Artigo de periodico
Effects of annealing on electrical coupling in a multilayer InAS/GaAs quantum dots system (2001)
Chiquito, Adenilson J; Pusep, Yuri A; Mergulhao, Sergio; Galzerani, Jose Carlos; Moshegov,Nikolai
Source: Japanese Journal of Applied Physics. Part. 1. Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CHIQUITO, Adenilson J et al. Effects of annealing on electrical coupling in a multilayer InAS/GaAs quantum dots system. Japanese Journal of Applied Physics. Part. 1, v. 40, n. 3B, p. 1882-1884, 2001Tradução . . Disponível em: https://doi.org/10.1143/JJAP.40.1882. Acesso em: 23 maio 2024.
APA
Chiquito, A. J., Pusep, Y. A., Mergulhao, S., Galzerani, J. C., & Moshegov, N. (2001). Effects of annealing on electrical coupling in a multilayer InAS/GaAs quantum dots system. Japanese Journal of Applied Physics. Part. 1, 40( 3B), 1882-1884. doi:10.1143/JJAP.40.1882
NLM
Chiquito AJ, Pusep YA, Mergulhao S, Galzerani JC, Moshegov N. Effects of annealing on electrical coupling in a multilayer InAS/GaAs quantum dots system [Internet]. Japanese Journal of Applied Physics. Part. 1. 2001 ;40( 3B): 1882-1884.[citado 2024 maio 23 ] Available from: https://doi.org/10.1143/JJAP.40.1882
Vancouver
Chiquito AJ, Pusep YA, Mergulhao S, Galzerani JC, Moshegov N. Effects of annealing on electrical coupling in a multilayer InAS/GaAs quantum dots system [Internet]. Japanese Journal of Applied Physics. Part. 1. 2001 ;40( 3B): 1882-1884.[citado 2024 maio 23 ] Available from: https://doi.org/10.1143/JJAP.40.1882

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